EPE Association: EPE 2022 - LS1c: Wide-Band Gap Power Converters

EPE 2022 - LS1c: Wide-Band Gap Power Converters
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 02: Power Converter Topologies and Design > EPE 2022 - LS1c: Wide-Band Gap Power Converters

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   Current Distribution Control in Parallel Connected Power Converters with Continuous Output Voltage
By Sabrina ULMER [View]
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Abstract: This contribution presents a hardware-based current distribution control concept of parallel connectedpower converters with quasi-continuous output voltage as part of a scalable and modular power electronic system for motor control using wide bandgap semiconductors.

   Design of a GaN-Based Reconfigurable Resonant Converter for High Frequency On-Board Charger of Battery Electric Vehicles
By Manh Tuan TRAN [View]
[Download]

Abstract: In this paper, a reconfigurable resonant converter for On-board Chargers (OBCs) and its' design consideration is proposed. This approach allows high frequency operation with maximum efficiency and Zero-Voltage Switching (ZVS) for all primary switches over a wide range of load conditions. The proposed converter is a combination of a Full Bridge LLC (FB-LLC) and an LCL compensator to form a high order resonant network.Constant Current (CC) and Constant Voltage (CV) charging profiles can be implemented automatically by reconfiguring the resonant network on the secondary side. In this design, GaN-FETs and a high frequency planar transformer are employed to further take advantage of high frequency operation. A 300kHz-3.3kW hardware prototype was built. Simulation and experiment results are provided with a maximum efficiency of 97\%.

   Function Blocks of a Highly-Integrated All-in-GaN Power IC for DC-DC Conversion
By Michael BASLER [View]
[Download]

Abstract: GaN-on-Si technology is on the advance for the use in power ICs thanks to wide bandgap performance combined with a lateral structure and a low-cost carrier substrate. A common GaN power IC platform with several active and passive devices, as well as analog and digital circuits is presented. This platform is used to integrate periphery function blocks of power electronics circuits, such as driving, sensing, protection, and control. In detail, an efficient GaN-based gate driver with integrated bootstrap capacitances is realized, which has a current consumption of only 2.2 mA at a supply voltage of 5 V and a switching frequency of 1 MHz. Furthermore, a GaN-based voltage mode control is described based on a PWM generator with error amplifier and verified with measurements. Finally, the circuit design of an all-in-GaN power IC for DC-DC conversion with half-bridge, driver, level shifter, dead time and voltage mode control is presented. With small additional chip area, further function blocks can be integrated to the power device(s) to realize a modern highly-efficient and highly-functional GaN-based conversion component for the next generation of power electronics.

EPE 2022 - LS1c: Wide-Band Gap Power Converters
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 02: Power Converter Topologies and Design > EPE 2022 - LS1c: Wide-Band Gap Power Converters
	[return to parent folder]

	Current Distribution Control in Parallel Connected Power Converters with Continuous Output Voltage By Sabrina ULMER	[View] [Download]
Abstract: This contribution presents a hardware-based current distribution control concept of parallel connectedpower converters with quasi-continuous output voltage as part of a scalable and modular power electronic system for motor control using wide bandgap semiconductors.

	Design of a GaN-Based Reconfigurable Resonant Converter for High Frequency On-Board Charger of Battery Electric Vehicles By Manh Tuan TRAN	[View] [Download]
Abstract: In this paper, a reconfigurable resonant converter for On-board Chargers (OBCs) and its' design consideration is proposed. This approach allows high frequency operation with maximum efficiency and Zero-Voltage Switching (ZVS) for all primary switches over a wide range of load conditions. The proposed converter is a combination of a Full Bridge LLC (FB-LLC) and an LCL compensator to form a high order resonant network.Constant Current (CC) and Constant Voltage (CV) charging profiles can be implemented automatically by reconfiguring the resonant network on the secondary side. In this design, GaN-FETs and a high frequency planar transformer are employed to further take advantage of high frequency operation. A 300kHz-3.3kW hardware prototype was built. Simulation and experiment results are provided with a maximum efficiency of 97\%.

	Function Blocks of a Highly-Integrated All-in-GaN Power IC for DC-DC Conversion By Michael BASLER	[View] [Download]
Abstract: GaN-on-Si technology is on the advance for the use in power ICs thanks to wide bandgap performance combined with a lateral structure and a low-cost carrier substrate. A common GaN power IC platform with several active and passive devices, as well as analog and digital circuits is presented. This platform is used to integrate periphery function blocks of power electronics circuits, such as driving, sensing, protection, and control. In detail, an efficient GaN-based gate driver with integrated bootstrap capacitances is realized, which has a current consumption of only 2.2 mA at a supply voltage of 5 V and a switching frequency of 1 MHz. Furthermore, a GaN-based voltage mode control is described based on a PWM generator with error amplifier and verified with measurements. Finally, the circuit design of an all-in-GaN power IC for DC-DC conversion with half-bridge, driver, level shifter, dead time and voltage mode control is presented. With small additional chip area, further function blocks can be integrated to the power device(s) to realize a modern highly-efficient and highly-functional GaN-based conversion component for the next generation of power electronics.