EPE Association: EPE 1985 - 01 - Lecture Session 1.01: POWER SEMICONDUCTORS AND DEVICE APPLICATION

EPE 1985 - 01 - Lecture Session 1.01: POWER SEMICONDUCTORS AND DEVICE APPLICATION
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1985 - Conference > EPE 1985 - 01 - Lecture Session 1.01: POWER SEMICONDUCTORS AND DEVICE APPLICATION

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   A COMPARISON OF POWER ELECTRONIC DEVICE TYPES
By H. Conrad; K. Lehnert; U. Nicolai [View]
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Abstract: This work contains general and concrete statements concerning the selection and comparison of power electronic devices. As an example we have considered a DC-chopper for motor control in which BJTs, darlingtons, MOSFETs and GTOs are investigated and compared. All these devices are easily applicable within the range of 1 kHz. In the range of more than 5 kHz the unsnubbered darlington and the GTO cannot be used because the power loss will increase rapidly. At 100kHz the power-MOSFET is the best. The BJT is also applicable if it works at smaller currents. The main advantages of GTOs and MOSFETs are the high voltage stress and the very small drive power respectively.

   PARALLELING OF HIGH VOLTAGE BIPOLAR POWER DARLINGTON
By P. Aloïsi [View]
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Abstract: The domain of power electronics increases month after month, and today, applications over 50 kVA are found using bipolar Darlington devices. Present packages are, however, thermally limited and paralleling bipolar Darlingtons is the only solution for these applications. This paper gives the designer solution guidelines for paralleling power devices easily and at low cost and give good system reliability as the result. Comparisons will be made of base drive, lay-out, matching device, case temperature effect, overload and current sharing by the hybrid free wheeling diodes.

   UTILISATION DE TRANSISTORS A FORT COURANT ET TENSION ELEVEE
By G. Bingen [View]
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Abstract: In most cases, transistors are underemployed. A better use requires an active snubber, to operate up to their Vcex and beyond their Icm. The base drive consists in a current transformer, and desaturation detection using both Vce and Vbe ensures protection. Two 15 kVA inverters built with single transistors in TO-3 cases are presented, based upon these considerations.

   ULTRA LOW LOSS NON-LINEAR TURN-OFF SNUBBERS FOR POWER ELECTRONIC SWITCHES
By C. G. Steyn; J. D. Van Wyk [View]
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Abstract: A novel suggestion for using non-linear capacitive snubbers is presented and evaluated experimentally by using a snubber capacitor switched in two stages, as well as using non-linear capacitors with ceramic dielectric. The reduction in snubber dissipation and turn-off losses obtained show clearly that this technique could make the use of regenerative snubbers unnecessary up to 20 kHz and 500 V.

   HIGH CURRENT SWITCHES FOR BRIDGE LEG
By L. Perier [View]
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Abstract: Due to the diversity of power equipment: SMPS, induction motor drive, brushless motor drive, UPS, welding converters,... current and voltage are not only criteria for the choice of a switch. Environmental characteristics and dynamic performances of each application influence directly the choice of the switching frequency of the transistors. Two converters working under the same supply voltage with the same currents with switching frequencies of 1 kHz for one and 20 kHz for the other have different design and switches. After an analysis of mechanical and electrical characteristics of different high current switches the author will present two concrete realizations of 100 A / 700 V / 1 kHz and 500 A / 80 V / 20 kHz showing well adapted switches and original design solutions.

EPE 1985 - 01 - Lecture Session 1.01: POWER SEMICONDUCTORS AND DEVICE APPLICATION
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1985 - Conference > EPE 1985 - 01 - Lecture Session 1.01: POWER SEMICONDUCTORS AND DEVICE APPLICATION
	[return to parent folder]

	A COMPARISON OF POWER ELECTRONIC DEVICE TYPES By H. Conrad; K. Lehnert; U. Nicolai	[View] [Download]
Abstract: This work contains general and concrete statements concerning the selection and comparison of power electronic devices. As an example we have considered a DC-chopper for motor control in which BJTs, darlingtons, MOSFETs and GTOs are investigated and compared. All these devices are easily applicable within the range of 1 kHz. In the range of more than 5 kHz the unsnubbered darlington and the GTO cannot be used because the power loss will increase rapidly. At 100kHz the power-MOSFET is the best. The BJT is also applicable if it works at smaller currents. The main advantages of GTOs and MOSFETs are the high voltage stress and the very small drive power respectively.

	PARALLELING OF HIGH VOLTAGE BIPOLAR POWER DARLINGTON By P. Aloïsi	[View] [Download]
Abstract: The domain of power electronics increases month after month, and today, applications over 50 kVA are found using bipolar Darlington devices. Present packages are, however, thermally limited and paralleling bipolar Darlingtons is the only solution for these applications. This paper gives the designer solution guidelines for paralleling power devices easily and at low cost and give good system reliability as the result. Comparisons will be made of base drive, lay-out, matching device, case temperature effect, overload and current sharing by the hybrid free wheeling diodes.

	UTILISATION DE TRANSISTORS A FORT COURANT ET TENSION ELEVEE By G. Bingen	[View] [Download]
Abstract: In most cases, transistors are underemployed. A better use requires an active snubber, to operate up to their Vcex and beyond their Icm. The base drive consists in a current transformer, and desaturation detection using both Vce and Vbe ensures protection. Two 15 kVA inverters built with single transistors in TO-3 cases are presented, based upon these considerations.

	ULTRA LOW LOSS NON-LINEAR TURN-OFF SNUBBERS FOR POWER ELECTRONIC SWITCHES By C. G. Steyn; J. D. Van Wyk	[View] [Download]
Abstract: A novel suggestion for using non-linear capacitive snubbers is presented and evaluated experimentally by using a snubber capacitor switched in two stages, as well as using non-linear capacitors with ceramic dielectric. The reduction in snubber dissipation and turn-off losses obtained show clearly that this technique could make the use of regenerative snubbers unnecessary up to 20 kHz and 500 V.

	HIGH CURRENT SWITCHES FOR BRIDGE LEG By L. Perier	[View] [Download]
Abstract: Due to the diversity of power equipment: SMPS, induction motor drive, brushless motor drive, UPS, welding converters,... current and voltage are not only criteria for the choice of a switch. Environmental characteristics and dynamic performances of each application influence directly the choice of the switching frequency of the transistors. Two converters working under the same supply voltage with the same currents with switching frequencies of 1 kHz for one and 20 kHz for the other have different design and switches. After an analysis of mechanical and electrical characteristics of different high current switches the author will present two concrete realizations of 100 A / 700 V / 1 kHz and 500 A / 80 V / 20 kHz showing well adapted switches and original design solutions.