EPE Association: EPE 1993 - 13 - Lecture Session L5a: DEVICES: MCT's, GTO's, IGBT's

EPE 1993 - 13 - Lecture Session L5a: DEVICES: MCT's, GTO's, IGBT's
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1993 - Conference > EPE 1993 - 13 - Lecture Session L5a: DEVICES: MCT's, GTO's, IGBT's

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   PHYSICAL BEHAVIOUR AND ELECTRICAL CHARACTERISTICS OF THE INSULATED BASE TRANSISTOR
By P. Godignon; X. Jordá; D. Flores; J. Femández; S. Hidalgo; J.A. Rebollo; J. Millán [View]
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Abstract: This paper is aimed at the analysis of the electrical characteristics of the vertical Insulated Base Transistor (IBT), a power MOS-bipolar structure that is not punished from latchup. The device breakdown voltage and the output characteristics are the main aspects considered in this work. The basic IBT structure shows a higher current capability and a lower breakdown voltage than the VDMOS. To avoid this breakdown voltage decrease, two modified IBT structures are presented. All these types of IBTs have been fabricated with different edge termination techniques to compare their electrical performances. The IBT with interconnected p-wells shows better performances than the IBT with shunt resistor. Moreover, their electrical characteristics have been also compared experimentally with that of the VDMOS and the IGBT.

   450V 30A BIPOLAR POWER TRANSISTOR WITH TWO LEVELS OF METALLISATION
By P. Hazard; D. Sebille; A. Senes [View]
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Abstract: A 450V 30A NPN transistor dedicated to DC contactor breaker is presented. At a forced gain of 10, it features a voltage drop of 0.5V at 30A. The turn off capability is 50A under 800V (Vcbo) by using a dedicated drive. A two layers metallisation has been developped in order to achieve this device. The structure has a fine emitter pitch. A fully brazed packaging is used to improve the surge behaviour and to decrease the stray inductance.

   SPECIAL 1400 VOLT N-MCT DESIGNED FOR SURGE APPLICATIONS
By S. D. Arthur; V. A. K. Temple [View]
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Abstract: The MOS Controlied Thyristor (MCT) is a power switching device which makes use of MOSFET tecbnology to control both the turn-on and turn-off of the thyristor element. The device may be fabricated as either a P-MCT or an N-MCT by switching the dopant polarities of the starting materials and subsequent diffusions (the label is determined by the dopant type of the lower base in the thyristor). The MCT bas just entered the commercial marketplace as a P-MCT gender device for general switch applications. The N-MCT. though not as far along in the development cycle has certain strengths which may be capitalized particularly in applications requiring a turn on switch for large peak currents and dI/dt. This paper will review the N-MCT properties which make it suitable for such an application and discuss the development of a small 1400 volt N-MCT (6.4 x 6.4 mm die size) which has been applied in a DC breaker circuit where it is used to interrupt as much as 1000 Amperes of fault current.

   1200V SNUBBERLESS SYMMETRICAL GTO FOR AC SWITCHES
By H. Kerboua; D. Sebille; F. Miserey [View]
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Abstract: A specific GTO dedicated to solid state contactor-breaker is presented. This device features a low voltage drop in conduction. The study of the influence of the gate drive shows that, if the extraction of the reverse gate current is very fast, it is possible to turn-off without snubber a cathode current density comparable to cascode structure (850A/cm²). The RBSOA of the GTO is studied while varying some structural parameters such as: the gate sheet resistance, the width of the cathode finger and the gain of the PNP section of the device. This device, associated to its dedicated drive, allows the design of solid state circuit breakers with minimum conduction losses.

EPE 1993 - 13 - Lecture Session L5a: DEVICES: MCT's, GTO's, IGBT's
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1993 - Conference > EPE 1993 - 13 - Lecture Session L5a: DEVICES: MCT's, GTO's, IGBT's
	[return to parent folder]

	PHYSICAL BEHAVIOUR AND ELECTRICAL CHARACTERISTICS OF THE INSULATED BASE TRANSISTOR By P. Godignon; X. Jordá; D. Flores; J. Femández; S. Hidalgo; J.A. Rebollo; J. Millán	[View] [Download]
Abstract: This paper is aimed at the analysis of the electrical characteristics of the vertical Insulated Base Transistor (IBT), a power MOS-bipolar structure that is not punished from latchup. The device breakdown voltage and the output characteristics are the main aspects considered in this work. The basic IBT structure shows a higher current capability and a lower breakdown voltage than the VDMOS. To avoid this breakdown voltage decrease, two modified IBT structures are presented. All these types of IBTs have been fabricated with different edge termination techniques to compare their electrical performances. The IBT with interconnected p-wells shows better performances than the IBT with shunt resistor. Moreover, their electrical characteristics have been also compared experimentally with that of the VDMOS and the IGBT.

	450V 30A BIPOLAR POWER TRANSISTOR WITH TWO LEVELS OF METALLISATION By P. Hazard; D. Sebille; A. Senes	[View] [Download]
Abstract: A 450V 30A NPN transistor dedicated to DC contactor breaker is presented. At a forced gain of 10, it features a voltage drop of 0.5V at 30A. The turn off capability is 50A under 800V (Vcbo) by using a dedicated drive. A two layers metallisation has been developped in order to achieve this device. The structure has a fine emitter pitch. A fully brazed packaging is used to improve the surge behaviour and to decrease the stray inductance.

	SPECIAL 1400 VOLT N-MCT DESIGNED FOR SURGE APPLICATIONS By S. D. Arthur; V. A. K. Temple	[View] [Download]
Abstract: The MOS Controlied Thyristor (MCT) is a power switching device which makes use of MOSFET tecbnology to control both the turn-on and turn-off of the thyristor element. The device may be fabricated as either a P-MCT or an N-MCT by switching the dopant polarities of the starting materials and subsequent diffusions (the label is determined by the dopant type of the lower base in the thyristor). The MCT bas just entered the commercial marketplace as a P-MCT gender device for general switch applications. The N-MCT. though not as far along in the development cycle has certain strengths which may be capitalized particularly in applications requiring a turn on switch for large peak currents and dI/dt. This paper will review the N-MCT properties which make it suitable for such an application and discuss the development of a small 1400 volt N-MCT (6.4 x 6.4 mm die size) which has been applied in a DC breaker circuit where it is used to interrupt as much as 1000 Amperes of fault current.

	1200V SNUBBERLESS SYMMETRICAL GTO FOR AC SWITCHES By H. Kerboua; D. Sebille; F. Miserey	[View] [Download]
Abstract: A specific GTO dedicated to solid state contactor-breaker is presented. This device features a low voltage drop in conduction. The study of the influence of the gate drive shows that, if the extraction of the reverse gate current is very fast, it is possible to turn-off without snubber a cathode current density comparable to cascode structure (850A/cm²). The RBSOA of the GTO is studied while varying some structural parameters such as: the gate sheet resistance, the width of the cathode finger and the gain of the PNP section of the device. This device, associated to its dedicated drive, allows the design of solid state circuit breakers with minimum conduction losses.