EPE Association: EPE 2017 - LS6b: Wide Band Gap Power Electronics

EPE 2017 - LS6b: Wide Band Gap Power Electronics
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2017 ECCE Europe - Conference > EPE 2017 - Topic 02: Power Converter Topologies and Design > EPE 2017 - LS6b: Wide Band Gap Power Electronics

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   A novel LED driver converter based on Bi-Directional GaN HEMT AC switches
By Leo STERNA [View]
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Abstract: A novel topology for LED drivers is proposed. The system does not require rectifier input stage norstorage DC bus capacitor. The topology is described and studied by simulation. Experimental results onan AC LED demonstrator using GaN transistors validate the proposed circuit.

   Development of a 10 kV Three-Phase Transformerless Inverter with 15 kV Silicon Carbide MOSFETs for Grid Stabilization and Active Filtering of Harmonics
By Dirk KRANZER [View]
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Abstract: The implementation of 15 kV Silicon Carbide (SiC) MOSFETs in a three-phase, three-level active power filter of 100 kVA for a 10 kVAC grid and their challenges is shown. Due to the high switching frequency of 16 kHz, respectively 32 kHz ripple frequency, it will perfectly suited for active filtering of harmonics in the medium voltage grid.

   High Efficiency Three-phase Power Factor Correction Rectifier using SiC switches
By Alireza KOUCHAKI [View]
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Abstract: This paper presents designing procedure of a high efficiency 5 kW silicon-carbide (SiC) based three-phase power factor correction (PFC). SiC switches present low capacitive switching loss compared to the alternative Si switches. Therefore, the switching frequency can be increased and hence the size of the line filter (generally reactive components) will be reduced. However, to achieve high efficiency an optimized switching frequency has to be selected. Accordingly the reactive components especially inductors are designed. The core material, winding method, and filter and dc link capacitors are chosen to fulfill the main objective of this paper. Finally, an optimized 5 kW SiC based PFC is designed. Maximum measured efficiency of 99.1\% at half of the nominal load is achieved and the full load efficiency is 99\%. It is shown that the measured efficiency is substantially flat for a wide range of loads and it is above 99\%.

   Influence of PWM methods in semiconductor losses of 15kVA three-phase SiC inverter for aircraft applications
By Bernardo COUGO [View]
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Abstract: In near future, modern aircrafts will be more electrical, having more power converters in different applications. Inverters is one of the most common applications, which are used in actuators, cabin pressurization, among others. In order to significantly reduce weight, size and losses of these converters, disruptive technology such as Wide Bandgap components (SiC and GaN transistors) should be used. In this paper, we study the influence of SiC components in a 540V/15kVA inverter for motor driving applications. The approach proposed here starts by the dynamic characterization of SiC modules with the aim of obtaining accurate switching energies in order to precisely calculate semiconductor losses in three-phase inverters. Then, precise conduction and switching loss calculation is developed to verify the influence of PWM methods on losses of this converter. A generic 15kVA inverter setup is built. Experimental results in this setup confirm the characterization and loss calculation and shows the best PWM methods for specific aircraft applications.

EPE 2017 - LS6b: Wide Band Gap Power Electronics
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2017 ECCE Europe - Conference > EPE 2017 - Topic 02: Power Converter Topologies and Design > EPE 2017 - LS6b: Wide Band Gap Power Electronics
	[return to parent folder]

	A novel LED driver converter based on Bi-Directional GaN HEMT AC switches By Leo STERNA	[View] [Download]
Abstract: A novel topology for LED drivers is proposed. The system does not require rectifier input stage norstorage DC bus capacitor. The topology is described and studied by simulation. Experimental results onan AC LED demonstrator using GaN transistors validate the proposed circuit.

	Development of a 10 kV Three-Phase Transformerless Inverter with 15 kV Silicon Carbide MOSFETs for Grid Stabilization and Active Filtering of Harmonics By Dirk KRANZER	[View] [Download]
Abstract: The implementation of 15 kV Silicon Carbide (SiC) MOSFETs in a three-phase, three-level active power filter of 100 kVA for a 10 kVAC grid and their challenges is shown. Due to the high switching frequency of 16 kHz, respectively 32 kHz ripple frequency, it will perfectly suited for active filtering of harmonics in the medium voltage grid.

	High Efficiency Three-phase Power Factor Correction Rectifier using SiC switches By Alireza KOUCHAKI	[View] [Download]
Abstract: This paper presents designing procedure of a high efficiency 5 kW silicon-carbide (SiC) based three-phase power factor correction (PFC). SiC switches present low capacitive switching loss compared to the alternative Si switches. Therefore, the switching frequency can be increased and hence the size of the line filter (generally reactive components) will be reduced. However, to achieve high efficiency an optimized switching frequency has to be selected. Accordingly the reactive components especially inductors are designed. The core material, winding method, and filter and dc link capacitors are chosen to fulfill the main objective of this paper. Finally, an optimized 5 kW SiC based PFC is designed. Maximum measured efficiency of 99.1\% at half of the nominal load is achieved and the full load efficiency is 99\%. It is shown that the measured efficiency is substantially flat for a wide range of loads and it is above 99\%.

	Influence of PWM methods in semiconductor losses of 15kVA three-phase SiC inverter for aircraft applications By Bernardo COUGO	[View] [Download]
Abstract: In near future, modern aircrafts will be more electrical, having more power converters in different applications. Inverters is one of the most common applications, which are used in actuators, cabin pressurization, among others. In order to significantly reduce weight, size and losses of these converters, disruptive technology such as Wide Bandgap components (SiC and GaN transistors) should be used. In this paper, we study the influence of SiC components in a 540V/15kVA inverter for motor driving applications. The approach proposed here starts by the dynamic characterization of SiC modules with the aim of obtaining accurate switching energies in order to precisely calculate semiconductor losses in three-phase inverters. Then, precise conduction and switching loss calculation is developed to verify the influence of PWM methods on losses of this converter. A generic 15kVA inverter setup is built. Experimental results in this setup confirm the characterization and loss calculation and shows the best PWM methods for specific aircraft applications.