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 EPE 2015 - DS1c: Measurements Techniques 
 You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 03: Measurement and Control > EPE 2015 - DS1c: Measurements Techniques 
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   Design of a Modular and Scalable Small-signal dq Impedance Measurement Unit for Grid Applications Utilizing 10 kV SiC MOSFETs 
 By Zhiyu SHEN 
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Abstract: Not only that tremendously increased employment of power electronics in the energy production, transfer, and consumption enables a sustainable future, it undoubtedly brings major energy savings and stimulating improvements in people's quality of life. But not for 'free'. This trend is considerably changing the nature of the sources and the loads in the electrical grid, altering their mild properties, and inflicting low-frequency dynamic interactions that did not exist in the conventional power system before. To be able to understand, analyze, design, and dynamically control the existing and future power systems, it is unarguably required to develop concepts and tools that offer better insights into the system-level behavior and stability of the grid. This paper presents the impedance measurement unit that can with no doubt address some of the listed needs by characterizing in-situ source and load impedances of the sub transmission medium-voltage networks (up to 69 kV). In addition to describing the design, this paper shows the experimental results obtained with the impedance measurement unit prototype built for 4.16 kV, capable of characterizing medium-voltage distribution systems of up to 2.2 MVA.

 
   Increase the thermal conductivity of high voltage electrical insulation systems 
 By Tetjana TOMASKOVA 
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Abstract: This article describes how nano and micro fillers can affect the properties of electrical insulation systems and heat transfer in electrical devices. Using specific fillers can improve performance parameters of electrical equipment without the design changes. It is important matter to study and mathematically describe the processes in high-voltage insulation systems, search for new materials which can improve dielectric thermal properties and the overall efficiency of high-voltage electrical equipment.

 
   MOSFET Parasitic Capacitance Change in Non-Zero Current and Voltage Bias Conditions 
 By Tobias KUREMYR 
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Abstract: Power MOSFETs have been primarily designed for switching applications, in which case they are operated to the best extent possible either at zero drain to source voltage or at zero drain current. Accordingly, datasheets provide parametric information including input, output and reverse parasitic capacitance at zero current level. When used in linear condition however, both drain to source voltage and drain current are non-zero at the same time, leaving open the question of the parasitic capacitance levels. The present paper reports relevant parameter measurements performed on a MOSFET available for linear control within power units on board of satellite. A parasitic capacitance increase by up to one order of magnitude is highlighted for non-zero currents, in particular between drain and source. The pattern has been confirmed by measurements on two additional MOSFETs. The attention of designers is therefore drawn on such feature as parasitic capacitance may significantly affect the performances of their designs, e.g. in terms of feedback control stability or conducted susceptibility for series regulator, or in terms of speed when switching in between zero current and zero voltage conditions.

 
   Switching speed limitations of high power IGBT modules 
 By Bogdan Ioan INCAU 
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Abstract: In this paper the switching speed limits of high power IGBT modules are investigated. The limitationof turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester.Different dc-bus stray inductances are considered, as well as the worst case scenario for the blockingdc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value fromturn-on gate driver side. Short circuit operations are investigated along with safe operating area forentire module to validate electrical capabilities under extreme conditions.

 
   Synchronized Current Sensing Techniques and Implementation on dSPACE-FPGA-Board Using Delta-Sigma-Modulator 
 By Thomas WOHLFAHRT 
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Abstract: This paper shows a current measurement technique, which combines approaches for synchronizedinverter current measurement with an advanced system of digital transmission and filtering of currentmeasurement values. The measurement technique gives a significant increase in performance,accuracy and robustness compared to classical measuring with sampled A/D conversion or notsynchronized techniques. This advantage is achieved by using a Delta-Sigma-Modulator for A/Dconversion and realization of signal evaluation with a sinc³-filter that is implemented in an FPGA.Additionally, the benefits in the precision and robustness of a new synchronized current samplingmode in combination with the digital processing and filtering of measured values are shown. Theevaluation of the signals and the control of the inverter system are realized by using an FPGA that ispart of the used dSPACE rapid control prototyping system. Digital signal processing and filtering arerealized with a new, for the use with the synchronized measurement technique, customized sinc³-filterstructure that gives best performance and efficiency in combination with the FPGA. A detailedimplementation of the technique is shown and the whole system is verified with a laboratory setup of acommon 2-level inverter system.

 
   Triple Pulse Tester - Efficient Power Loss Characterization of power modules 
 By Ionut TRINTIS 
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Abstract: In this paper the triple pulse testing method and circuit for power loss characterization of power modulesis introduced. The proposed test platform is able to accurately characterize both the switching andconduction losses of power modules in a single automated process. A configuration of a half bridge istested by making a sweep of the junction temperature, dc-link voltage, and current for a given gate driveand dc-bus setup. Test results are presented for a 1700 V 1400 A IGBT power module.