EPE Association: EPE 2013 - LS4c: IGBT, Diode & Driver

EPE 2013 - LS4c: IGBT, Diode & Driver
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - LS4c: IGBT, Diode & Driver

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   Evaluation of 600V GaN and SiC Schottky-Diodes at Different Temperatures
By Nasser BADAWI, Eldad BAHAT-TREIDEL, Sibylle DIECKERHOFF, Oliver HILT, Hans Joachim WÜRFL [View]
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Abstract: This paper presents a newly developed 600V/2A Gallium Nitride (GaN) Schottky diode feasible for high frequency operation. Static and dynamic characteristics of the diode are experimentally evaluated at different temperatures and compared to a commercially available 600V/2A Silicon Carbide (SiC) Schottky diode. The test for both diodes is carried out under identical conditions. The proposed GaN diode shows very good switching properties and the potential to operate at very high switching frequencies and high temperatures with low switching loss.

   Fully digitised, quasi-continuous working gate-drive unit for 1200V-IGBTs
By Robin VOIGT, Karsten HANDT, Romy KNORR, Melanie ECKERT [View]
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Abstract: Improving the performance of prospective inverters can not only be realised by advanced power semiconductors and faster signal-processing components on its own. Even the circuitry that combines all together opens up new possibilities. So, the gate-drive unit takes a central place in an inverter to increase power density and efficiency. This paper presents a digitised gate-drive unit for 1200V-IGBTs that works in a quasi-continuous manner. Its inner digital signal-processing is done by a FPGA. The publication describes the design, the implemented main features and the schematic functionality of this novel gate-drive unit. Furthermore, there is a summary of the potential to adjust the behaviour of the IGBT, the diode and the whole inverter. An outlook, which shows the major advantages of this gate-drive unit and their practically use for achieving the proposed aims, finally concludes.

   Simulation of the IGBT switching-off with the charge extraction model
By Joerg SCHUMANN, Hans-Guenter ECKEL, Jurgen BOHMER [View]
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Abstract: The Charge Extraction Model is a high voltage IGBT model for the turn-off behaviour under extreme switching conditions to evaluate different gate driving circuits. This model is a physical founded IGBT model and considers the carrier distribution and the current profiles during the switching-off in one dimension through the device. It can be used for circuit simulations and shows some advantages in relation to standard circuit models or finite element based device ones. In this paper, the charge extraction model is used to understand the current redistribution of paralleled IGBT, to master the gate drive under variable gate current profiles and to show effects concerning the carrier distribution before turning-off.

EPE 2013 - LS4c: IGBT, Diode & Driver
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - LS4c: IGBT, Diode & Driver
	[return to parent folder]

	Evaluation of 600V GaN and SiC Schottky-Diodes at Different Temperatures By Nasser BADAWI, Eldad BAHAT-TREIDEL, Sibylle DIECKERHOFF, Oliver HILT, Hans Joachim WÜRFL	[View] [Download]
Abstract: This paper presents a newly developed 600V/2A Gallium Nitride (GaN) Schottky diode feasible for high frequency operation. Static and dynamic characteristics of the diode are experimentally evaluated at different temperatures and compared to a commercially available 600V/2A Silicon Carbide (SiC) Schottky diode. The test for both diodes is carried out under identical conditions. The proposed GaN diode shows very good switching properties and the potential to operate at very high switching frequencies and high temperatures with low switching loss.

	Fully digitised, quasi-continuous working gate-drive unit for 1200V-IGBTs By Robin VOIGT, Karsten HANDT, Romy KNORR, Melanie ECKERT	[View] [Download]
Abstract: Improving the performance of prospective inverters can not only be realised by advanced power semiconductors and faster signal-processing components on its own. Even the circuitry that combines all together opens up new possibilities. So, the gate-drive unit takes a central place in an inverter to increase power density and efficiency. This paper presents a digitised gate-drive unit for 1200V-IGBTs that works in a quasi-continuous manner. Its inner digital signal-processing is done by a FPGA. The publication describes the design, the implemented main features and the schematic functionality of this novel gate-drive unit. Furthermore, there is a summary of the potential to adjust the behaviour of the IGBT, the diode and the whole inverter. An outlook, which shows the major advantages of this gate-drive unit and their practically use for achieving the proposed aims, finally concludes.

	Simulation of the IGBT switching-off with the charge extraction model By Joerg SCHUMANN, Hans-Guenter ECKEL, Jurgen BOHMER	[View] [Download]
Abstract: The Charge Extraction Model is a high voltage IGBT model for the turn-off behaviour under extreme switching conditions to evaluate different gate driving circuits. This model is a physical founded IGBT model and considers the carrier distribution and the current profiles during the switching-off in one dimension through the device. It can be used for circuit simulations and shows some advantages in relation to standard circuit models or finite element based device ones. In this paper, the charge extraction model is used to understand the current redistribution of paralleled IGBT, to master the gate drive under variable gate current profiles and to show effects concerning the carrier distribution before turning-off.