EPE Association: EPE 2013 - LS7f: Power MOSFET

EPE 2013 - LS7f: Power MOSFET
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - LS7f: Power MOSFET

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   Automotive MOSFETs in repetitive avalanche mode
By Marco PUERSCHEL, Dirk AHLERS, Daniel SCHLEISSER, Mario EICHER [View]
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Abstract: This paper will focus on one of the most difficult operation modes of automotive MOSFETs, the operation in avalanche in particular repetitive avalanche. Whereas single pulse avalanche conditions are typically very well defined and tested, repetitive avalanche operation is always an area of discussion as the number of influencing parameters is considerably higher. In automotive applications a vast range of requirements for repetitive avalanche are visible: starting from applications with only a very limited number of avalanche cycles however with comparably high energy, via applications which use the MOSFET avalanche capability on purpose to turn off inductive loads, towards applications switching the MOSFETs billions of times with very low avalanche energies. In this paper we discuss the requirements of repetitive Avalanche from application point of view, give some basic information on avalanche mode and test results of single and repetitive avalanche explained and assessed. Failure modes will be highlighted.

   Compact three phase inverter in Silicon Carbide technology for auxiliary converter railway applications
By M Fisal AL KAYAL, Johnny BOUSAADA [View]
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Abstract: The low switching losses of the Silicon Carbide (SiC) components enable power converter to operate at higher switching frequencies and higher junction temperature. Operating at high switching frequencies enables to reduce volume and weight of passive component. Operating at high junction temperature helps to reduce size and weight of the cooling system or even enables the use of a natural cooling system. As a result, reduction of end-system cost can be achieved.This paper explains difficulties of using Silicon Carbide Power switch working at high switching rate and high junction temperatures. The paper explains how to overcome these difficulties. It demonstrates that it is not obligatory to use high technology gate driver or high temperature power capacitor in a Silicon Carbide converter. The paper demonstrates that if the design of the complete system is “well done”, classical technology could be used. So a “low cost” Silicon Carbide power converter is achievable.Target applications are auxiliary converter for railway applications. An optimized SiC three phase inverter is built. This inverter uses a Silicon Carbide power MOSFET of 1200V and 100A from Cree. Some design and optimization points of the inverter are demonstrated. Experimental results are shown at the end of the paper

   ROBUSTNESS OF MOSFET DEVICES UNDER HARD COMMUTATION OF THE BODY DIODE
By Ralf SIEMIENIEC, Juan SANCHEZ, Oliver BLANK, Michael HUTZLER, Li Juin YIP [View]
[Download]

Abstract: This paper presents a study of the behavior of power MOSFET devices under hard commutation of the body diode as well as improvements of that behavior shown by latest technology developments based on detailed simulations of the device. Hard commutation of the body diode can represent a challenging mode of operation in regards to the ruggedness of power MOSFET devices. Also, the behavior of the body diode under hard commutation and its corresponding effects on the application are analyzed.

EPE 2013 - LS7f: Power MOSFET
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - LS7f: Power MOSFET
	[return to parent folder]

	Automotive MOSFETs in repetitive avalanche mode By Marco PUERSCHEL, Dirk AHLERS, Daniel SCHLEISSER, Mario EICHER	[View] [Download]
Abstract: This paper will focus on one of the most difficult operation modes of automotive MOSFETs, the operation in avalanche in particular repetitive avalanche. Whereas single pulse avalanche conditions are typically very well defined and tested, repetitive avalanche operation is always an area of discussion as the number of influencing parameters is considerably higher. In automotive applications a vast range of requirements for repetitive avalanche are visible: starting from applications with only a very limited number of avalanche cycles however with comparably high energy, via applications which use the MOSFET avalanche capability on purpose to turn off inductive loads, towards applications switching the MOSFETs billions of times with very low avalanche energies. In this paper we discuss the requirements of repetitive Avalanche from application point of view, give some basic information on avalanche mode and test results of single and repetitive avalanche explained and assessed. Failure modes will be highlighted.

	Compact three phase inverter in Silicon Carbide technology for auxiliary converter railway applications By M Fisal AL KAYAL, Johnny BOUSAADA	[View] [Download]
Abstract: The low switching losses of the Silicon Carbide (SiC) components enable power converter to operate at higher switching frequencies and higher junction temperature. Operating at high switching frequencies enables to reduce volume and weight of passive component. Operating at high junction temperature helps to reduce size and weight of the cooling system or even enables the use of a natural cooling system. As a result, reduction of end-system cost can be achieved.This paper explains difficulties of using Silicon Carbide Power switch working at high switching rate and high junction temperatures. The paper explains how to overcome these difficulties. It demonstrates that it is not obligatory to use high technology gate driver or high temperature power capacitor in a Silicon Carbide converter. The paper demonstrates that if the design of the complete system is “well done”, classical technology could be used. So a “low cost” Silicon Carbide power converter is achievable.Target applications are auxiliary converter for railway applications. An optimized SiC three phase inverter is built. This inverter uses a Silicon Carbide power MOSFET of 1200V and 100A from Cree. Some design and optimization points of the inverter are demonstrated. Experimental results are shown at the end of the paper

	ROBUSTNESS OF MOSFET DEVICES UNDER HARD COMMUTATION OF THE BODY DIODE By Ralf SIEMIENIEC, Juan SANCHEZ, Oliver BLANK, Michael HUTZLER, Li Juin YIP	[View] [Download]
Abstract: This paper presents a study of the behavior of power MOSFET devices under hard commutation of the body diode as well as improvements of that behavior shown by latest technology developments based on detailed simulations of the device. Hard commutation of the body diode can represent a challenging mode of operation in regards to the ruggedness of power MOSFET devices. Also, the behavior of the body diode under hard commutation and its corresponding effects on the application are analyzed.