EPE Association: EPE 2011 - LS7c: Topic 02: System Integration & Packaging, Reliability and Modelling

EPE 2011 - LS7c: Topic 02: System Integration & Packaging, Reliability and Modelling
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 02: Passive Components, System Integration & Packaging > EPE 2011 - LS7c: Topic 02: System Integration & Packaging, Reliability and Modelling

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   Complete Short Failure-Mode Properties and Comparison Based on IGBT Standard Packaging. Application to New Fault-Tolerant Inverter and Interleaved Chopper with
By Frédéric RICHARDEAU, Zhifeng DOU, Jean-Marc BLAQUIERE, Emmanuel SARRAUTE, Didier FLUMIAN, Franck MOSSER [View]
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Abstract: Epoxy molded package and silicone gel module are compared in short-circuit failure mode with respect to critical energy, I²Tmelting and explosion energy capabilities. The molded technology yields a very low and stable Rsc "residual ohmic value" of the dies in low energy short failure which are analyzed through a complete 3D reverse. A continuous thermal cycling test over a short term (duration < 1000h) also exhibits an acceptable low drift of the Rsc property. These original and not enough known properties are afterwards used for new and original fail-safe X-phase inverter or interleaved chopper. All these proposed topologies use only one paralleled safety leg that is spontaneously connected in series with the faulty devices without any additional complexity or extra cost. Finally, a first lab. set-up provides additional properties during the disconnection of the faulty leg and the automatic connection of the safety leg.

   Improved Characterization of the Magnetic Properties of Hexagonally Packed Wires
By Hans ROSSMANITH, Manfred ALBACH, Janina PATZ, Alexander STADLER [View]
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Abstract: An improved complex permeability model for litz wire windings is derived heuristically from a comparison between simulation results and the standard analytical model. It is valid for all strand diameters, strand distances and frequencies, and may be used for accurate numerical calculations of magnetic fields and losses in magnetic components.

   Power Sandwich Industrial Drive with SiC JFETs
By Ivan JOSIFOVIC, Jelena POPOVIC-GERBER, Jan Abraham FERREIRA [View]
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Abstract: This work presents an implementation of a compact and highly efficient 2.2kW industrial drive using the Power Sandwich layered construction, x-dimension (x-dim) passive components and wide-band gap SiC semiconductors (JFETs and diodes). X-dim SMT components that have uniform height and enhanced thermal properties are stacked between planar substrates to achieve high power density and better thermal performance of industrial drive. The use of wide band gap SiC semiconductors results in an industrial drive efficiency increase of around 3\% compared to that of Si-based counterpart. It is found that the parasitic coupling between SiC semiconductors and heat sinks significantly deteriorates the JFET’s switching performance. The thermal management concept for industrial drive, in which two separate heat sinks minimises the capacitive coupling effect thus exploiting the full potential of fast SiC JFETs is proposed. The layered 3-D construction and lower power loss enabled by SiC semiconductors allows for reduced thermal management effort and consequently increased power density. The 2.2kW SiC-based industrial drive has the power density of 3.8kW/l, system efficiency of 98.4\% and operates at the temperatures below 50˚C without typical heavy and/or complex heat sinks.

EPE 2011 - LS7c: Topic 02: System Integration & Packaging, Reliability and Modelling
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 02: Passive Components, System Integration & Packaging > EPE 2011 - LS7c: Topic 02: System Integration & Packaging, Reliability and Modelling
	[return to parent folder]

	Complete Short Failure-Mode Properties and Comparison Based on IGBT Standard Packaging. Application to New Fault-Tolerant Inverter and Interleaved Chopper with By Frédéric RICHARDEAU, Zhifeng DOU, Jean-Marc BLAQUIERE, Emmanuel SARRAUTE, Didier FLUMIAN, Franck MOSSER	[View] [Download]
Abstract: Epoxy molded package and silicone gel module are compared in short-circuit failure mode with respect to critical energy, I²Tmelting and explosion energy capabilities. The molded technology yields a very low and stable Rsc "residual ohmic value" of the dies in low energy short failure which are analyzed through a complete 3D reverse. A continuous thermal cycling test over a short term (duration < 1000h) also exhibits an acceptable low drift of the Rsc property. These original and not enough known properties are afterwards used for new and original fail-safe X-phase inverter or interleaved chopper. All these proposed topologies use only one paralleled safety leg that is spontaneously connected in series with the faulty devices without any additional complexity or extra cost. Finally, a first lab. set-up provides additional properties during the disconnection of the faulty leg and the automatic connection of the safety leg.

	Improved Characterization of the Magnetic Properties of Hexagonally Packed Wires By Hans ROSSMANITH, Manfred ALBACH, Janina PATZ, Alexander STADLER	[View] [Download]
Abstract: An improved complex permeability model for litz wire windings is derived heuristically from a comparison between simulation results and the standard analytical model. It is valid for all strand diameters, strand distances and frequencies, and may be used for accurate numerical calculations of magnetic fields and losses in magnetic components.

	Power Sandwich Industrial Drive with SiC JFETs By Ivan JOSIFOVIC, Jelena POPOVIC-GERBER, Jan Abraham FERREIRA	[View] [Download]
Abstract: This work presents an implementation of a compact and highly efficient 2.2kW industrial drive using the Power Sandwich layered construction, x-dimension (x-dim) passive components and wide-band gap SiC semiconductors (JFETs and diodes). X-dim SMT components that have uniform height and enhanced thermal properties are stacked between planar substrates to achieve high power density and better thermal performance of industrial drive. The use of wide band gap SiC semiconductors results in an industrial drive efficiency increase of around 3\% compared to that of Si-based counterpart. It is found that the parasitic coupling between SiC semiconductors and heat sinks significantly deteriorates the JFET’s switching performance. The thermal management concept for industrial drive, in which two separate heat sinks minimises the capacitive coupling effect thus exploiting the full potential of fast SiC JFETs is proposed. The layered 3-D construction and lower power loss enabled by SiC semiconductors allows for reduced thermal management effort and consequently increased power density. The 2.2kW SiC-based industrial drive has the power density of 3.8kW/l, system efficiency of 98.4\% and operates at the temperatures below 50˚C without typical heavy and/or complex heat sinks.