EPE Association: EPE 2011 - LS4c: Topic 01 - New Silicon Devices and Gate Drive Methods

EPE 2011 - LS4c: Topic 01 - New Silicon Devices and Gate Drive Methods
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - LS4c: Topic 01 - New Silicon Devices and Gate Drive Methods

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   A New Power MOSFET Generation designed for Synchronous Rectification
By Ralf SIEMIENIEC, Christian MOESSLACHER, Oliver BLANK, Maximilian ROESCH, Michaela FRANK, Michael HUTZLER [View]
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Abstract: Low-voltage MOSFETs are widely used in the synchronous rectifying stages of power supplies. To allow a high efficiency in light-load conditions, the power MOSFET not only needs to meet general requirements like low on-resistance, low gate charge and good avalanche capability, but must also have a low output capacitance and low reverse-recovery charge. The paper shows how those requirements were met in our newest generation of power MOSFET starting with the 60 V class.

   Advanced Three-Level Converter with Newly developed 1200V Reverse Blocking IGBTs
By Seiki IGARASHI, Syuuji MYASHITA, Hiroki WAKIMOTO, Haruo NAKAZAWA, Yasuhiro OKUMA [View]
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Abstract: We developed the high voltage type modules for these renewal energy systems such as the Wind Turbine systems, Mega solar systems and “AC690V system”. The high voltage type modules are consisted of the 6th generation 1700V IGBT and FWD and 2nd generation 1200V RB-IGBT. There was a problem in the 1200V RB-IGBT for its productivity with conventional structure, because it is necessary to have long doping process time. In this time a new hybrid through-silicon isolation process was developed for 2nd generation 1200V RB-IGBT (RB-IGBT by combining wafer front-side Boron diffusion and back-side V-groove etching). Collector layer was implanted into the back-side and the surface of the V-groove, and electrically connected to the front-side Boron diffusion after activation. Thermal budget for the surface depth of Boron diffusion was thereby significantly shortened more than half for 1200V devices. This paper explains the 2nd generation 1200V RB-IGBT process flow and the experimental results of electrical characteristics. We had achieved that the power conversion efficiency of A-NPC 3-level inverter using RB-IGBTs was 98.57\%, which total loss is 15\% and 31\% smaller than that of NPC 3-level and normal 2-level inverters, respectively.

   Effects of Varying Load Conditions on Adaptive Gate Control Methods
By Matthias ROSE, Joerg KRUPAR, Henry GUELDNER, Eberhard BRENNER [View]
[Download]

Abstract: Two different adaptive gate control methods were developed recently to improve EMC of SMPCs withfast switching Power-MOSFETs. These successively working methods take advantage of compensatingdriver delays and therefore are able to actively control the current and voltage slope during switching aswell as to minimize deadtimes. But there are some constraints when used in applications with highlydynamic drives. This paper analyses the effects of varying load conditions on the successively workingmethods and proves the operation of the control methods in a brushless DC motor application.

EPE 2011 - LS4c: Topic 01 - New Silicon Devices and Gate Drive Methods
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - LS4c: Topic 01 - New Silicon Devices and Gate Drive Methods
	[return to parent folder]

	A New Power MOSFET Generation designed for Synchronous Rectification By Ralf SIEMIENIEC, Christian MOESSLACHER, Oliver BLANK, Maximilian ROESCH, Michaela FRANK, Michael HUTZLER	[View] [Download]
Abstract: Low-voltage MOSFETs are widely used in the synchronous rectifying stages of power supplies. To allow a high efficiency in light-load conditions, the power MOSFET not only needs to meet general requirements like low on-resistance, low gate charge and good avalanche capability, but must also have a low output capacitance and low reverse-recovery charge. The paper shows how those requirements were met in our newest generation of power MOSFET starting with the 60 V class.

	Advanced Three-Level Converter with Newly developed 1200V Reverse Blocking IGBTs By Seiki IGARASHI, Syuuji MYASHITA, Hiroki WAKIMOTO, Haruo NAKAZAWA, Yasuhiro OKUMA	[View] [Download]
Abstract: We developed the high voltage type modules for these renewal energy systems such as the Wind Turbine systems, Mega solar systems and “AC690V system”. The high voltage type modules are consisted of the 6th generation 1700V IGBT and FWD and 2nd generation 1200V RB-IGBT. There was a problem in the 1200V RB-IGBT for its productivity with conventional structure, because it is necessary to have long doping process time. In this time a new hybrid through-silicon isolation process was developed for 2nd generation 1200V RB-IGBT (RB-IGBT by combining wafer front-side Boron diffusion and back-side V-groove etching). Collector layer was implanted into the back-side and the surface of the V-groove, and electrically connected to the front-side Boron diffusion after activation. Thermal budget for the surface depth of Boron diffusion was thereby significantly shortened more than half for 1200V devices. This paper explains the 2nd generation 1200V RB-IGBT process flow and the experimental results of electrical characteristics. We had achieved that the power conversion efficiency of A-NPC 3-level inverter using RB-IGBTs was 98.57\%, which total loss is 15\% and 31\% smaller than that of NPC 3-level and normal 2-level inverters, respectively.

	Effects of Varying Load Conditions on Adaptive Gate Control Methods By Matthias ROSE, Joerg KRUPAR, Henry GUELDNER, Eberhard BRENNER	[View] [Download]
Abstract: Two different adaptive gate control methods were developed recently to improve EMC of SMPCs withfast switching Power-MOSFETs. These successively working methods take advantage of compensatingdriver delays and therefore are able to actively control the current and voltage slope during switching aswell as to minimize deadtimes. But there are some constraints when used in applications with highlydynamic drives. This paper analyses the effects of varying load conditions on the successively workingmethods and proves the operation of the control methods in a brushless DC motor application.