EPE Association: EPE 2009 - Subtopic 02-2 - LS: 'Passive Components, System Integration & Packaging'

EPE 2009 - Subtopic 02-2 - LS: 'Passive Components, System Integration & Packaging'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 02: 'Passive Components, System Integration and Packaging' > EPE 2009 - Subtopic 02-2 - LS: 'Passive Components, System Integration & Packaging'

   [return to parent folder]

   Using the chip as temperature sensor - the influence of steep lateral temperature gradients on the Vce(T)-measurement
By Ralf SCHMIDT, Uwe SCHEUERMANN [View]
[Download]

Abstract: During operation steep lateral temperature gradients evolve in IGBT power semiconductor chips. The influence of these lateral gradients on the measurement of the virtual junction temperature by means of the widely used VCE(T)-method was investigated. In particular we address the question, how the obtained single temperature value is connected to the temperature distribution of the chip. A combination of electrical and thermal measurements together with thermal simulations was performed to understand the implicit averaging mechanisms of the VCE(T)-measurement. It is found that the lateral temperature gradient in the chip results in an inhomogeneous sense current distribution during the measurement. This current distribution is responsible for the formation of the measurement value and its corresponding temperature T*. A comparison of experimental and simulation results shows that for currently existing IGBTs, T* corresponds to the area-weighted average of the chipâ€™s active area. The maximum imbalance in sense current density during the VCE(T)-measurement was determined to be 150\% and 50\% of the average current density for the central and the corner parts of the chip, respectively. Furthermore, the temporal evolution of the temperature profile and its influence on the thermal impedance measurement are discussed. It is shown that the temperature at the chip center evolves with a smaller thermal time constant (i.e. faster evolution) than at the chip corners.

   A study of common mode current reduction in PWM inverter with core modeling and system simulation
By Koichi SHIGEMATSU, Takahiro KOGA, Shigeru HASUMURA, YAMANAKA AKIHIRO, Takashi ABE [View]
[Download]

Abstract: The goal of this research is to reduce the common mode current in inverter system. To reach the goal, it is important to understand the behavior of common mode current precisely in the inverter circuits. Recently, computer simulation is widely used for this issue according to create good simulation model for individual electric component in used inverter system. The simulation results/accuracies are strongly depend on the modeling level/accuracy as widely known. In this paper we create the system simulation model for core design and motor model with grounded impedance as well. In this simulation, the key point is soft magnetized core modeling can be used in system simulation. Also this paper illustrates how to utilize the system simulation for inverter and motor drive system. This technique is verified by simulations and experiments.

   Pressure tolerant power IGBT modules for subsea applications
By Astrid PETTERTEIG [View]
[Download]

Abstract: This paper discusses methods to adapt power semiconductors like IGBTs for subsea operation, in from 1 bar to high pressure environment, and presents tests done to demonstrate reliable operation. The paper has focus on three main challenges; the liquid dielectric and how to avoid air filled voids, where the highest electric voltage stress occur, and whether operation in liquid without gel influence on the switching. Different test approaches and test results presented show that IGBTs operate well with MidelÂ® 7131 as dielectric media. Potential advantages and challenges of bonded and press-pack technologies are shown to be quite different.

EPE 2009 - Subtopic 02-2 - LS: 'Passive Components, System Integration & Packaging'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 02: 'Passive Components, System Integration and Packaging' > EPE 2009 - Subtopic 02-2 - LS: 'Passive Components, System Integration & Packaging'
	[return to parent folder]

	Using the chip as temperature sensor - the influence of steep lateral temperature gradients on the Vce(T)-measurement By Ralf SCHMIDT, Uwe SCHEUERMANN	[View] [Download]
Abstract: During operation steep lateral temperature gradients evolve in IGBT power semiconductor chips. The influence of these lateral gradients on the measurement of the virtual junction temperature by means of the widely used VCE(T)-method was investigated. In particular we address the question, how the obtained single temperature value is connected to the temperature distribution of the chip. A combination of electrical and thermal measurements together with thermal simulations was performed to understand the implicit averaging mechanisms of the VCE(T)-measurement. It is found that the lateral temperature gradient in the chip results in an inhomogeneous sense current distribution during the measurement. This current distribution is responsible for the formation of the measurement value and its corresponding temperature T. A comparison of experimental and simulation results shows that for currently existing IGBTs, T corresponds to the area-weighted average of the chipâ€™s active area. The maximum imbalance in sense current density during the VCE(T)-measurement was determined to be 150\% and 50\% of the average current density for the central and the corner parts of the chip, respectively. Furthermore, the temporal evolution of the temperature profile and its influence on the thermal impedance measurement are discussed. It is shown that the temperature at the chip center evolves with a smaller thermal time constant (i.e. faster evolution) than at the chip corners.

	A study of common mode current reduction in PWM inverter with core modeling and system simulation By Koichi SHIGEMATSU, Takahiro KOGA, Shigeru HASUMURA, YAMANAKA AKIHIRO, Takashi ABE	[View] [Download]
Abstract: The goal of this research is to reduce the common mode current in inverter system. To reach the goal, it is important to understand the behavior of common mode current precisely in the inverter circuits. Recently, computer simulation is widely used for this issue according to create good simulation model for individual electric component in used inverter system. The simulation results/accuracies are strongly depend on the modeling level/accuracy as widely known. In this paper we create the system simulation model for core design and motor model with grounded impedance as well. In this simulation, the key point is soft magnetized core modeling can be used in system simulation. Also this paper illustrates how to utilize the system simulation for inverter and motor drive system. This technique is verified by simulations and experiments.

	Pressure tolerant power IGBT modules for subsea applications By Astrid PETTERTEIG	[View] [Download]
Abstract: This paper discusses methods to adapt power semiconductors like IGBTs for subsea operation, in from 1 bar to high pressure environment, and presents tests done to demonstrate reliable operation. The paper has focus on three main challenges; the liquid dielectric and how to avoid air filled voids, where the highest electric voltage stress occur, and whether operation in liquid without gel influence on the switching. Different test approaches and test results presented show that IGBTs operate well with MidelÂ® 7131 as dielectric media. Potential advantages and challenges of bonded and press-pack technologies are shown to be quite different.