EPE Association: EPE 2009 - Subtopic 14-4 - LS: 'Advanced PV Systems'

EPE 2009 - Subtopic 14-4 - LS: 'Advanced PV Systems'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 14: 'Electrical Energy Generating Systems, Renewable Energy Systems' > EPE 2009 - Subtopic 14-4 - LS: 'Advanced PV Systems'

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   Advanced High Power on-Grid PV Converters
By Bernd ENGEL [View]
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Abstract: The EPE 2009-team regrets to inform you that this full paper (or in case of invited lectures: presentation) was not uploaded before the deadline of our conference.

   High Density off-Grid Converters for PV-Power
By Alvaro EGUINOA [View]
[Download]

Abstract: The EPE 2009-team regrets to inform you that this full paper (or in case of invited lectures: presentation) was not uploaded before the deadline of our conference.

   New Concepts for Silicon Solar Cells
By Christian SCHMIGA, Martin HERMLE, Stefan GLUNZ [View]
[Download]

Abstract: Today, using state-of-the-art technology for manufacturing silicon solar cells, efficiencies of 14.0-16.5 \% on multicrystalline and 16.0-18.0 \% on monocrystalline Si substrates are achieved in production lines. Commonly, these solar cells have a boron-doped p-type base and feature a screen-printed Ag front contact grid on a heavily phosphorus-diffused n+ emitter and a full-area Al rear contact. In this contribution, we discuss the impact of recently developed new processing steps for a further improvement of the cell performance, in particular (i) two layer metallisation - seed and growth, (ii) contacting of blue-sensitive emitters and (iii) rear surface passivation with point contacts. Cell efficiencies above 20 \% are demonstrated after successful implementation of these industrially feasible fabrication steps. Furthermore, a short review is given about new innovative high-efficiency cell concepts including (i) metal wrap through (MWT), (ii) emitter wrap through (EWT) and (iii) back junction back contact (BJBC) silicon solar cells, pointing out the advantages and challenges of these cell structures. Due to the fact that today high-efficiency solar cells are mainly produced on n-type mono Si wafers, we pay special attention to n-type solar cells, comparing boron-doped emitter, aluminium-doped emitter and a-Si:H-c-Si hetero solar cells with each other.

EPE 2009 - Subtopic 14-4 - LS: 'Advanced PV Systems'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 14: 'Electrical Energy Generating Systems, Renewable Energy Systems' > EPE 2009 - Subtopic 14-4 - LS: 'Advanced PV Systems'
	[return to parent folder]

	Advanced High Power on-Grid PV Converters By Bernd ENGEL	[View] [Download]
Abstract: The EPE 2009-team regrets to inform you that this full paper (or in case of invited lectures: presentation) was not uploaded before the deadline of our conference.

	High Density off-Grid Converters for PV-Power By Alvaro EGUINOA	[View] [Download]
Abstract: The EPE 2009-team regrets to inform you that this full paper (or in case of invited lectures: presentation) was not uploaded before the deadline of our conference.

	New Concepts for Silicon Solar Cells By Christian SCHMIGA, Martin HERMLE, Stefan GLUNZ	[View] [Download]
Abstract: Today, using state-of-the-art technology for manufacturing silicon solar cells, efficiencies of 14.0-16.5 \% on multicrystalline and 16.0-18.0 \% on monocrystalline Si substrates are achieved in production lines. Commonly, these solar cells have a boron-doped p-type base and feature a screen-printed Ag front contact grid on a heavily phosphorus-diffused n+ emitter and a full-area Al rear contact. In this contribution, we discuss the impact of recently developed new processing steps for a further improvement of the cell performance, in particular (i) two layer metallisation - seed and growth, (ii) contacting of blue-sensitive emitters and (iii) rear surface passivation with point contacts. Cell efficiencies above 20 \% are demonstrated after successful implementation of these industrially feasible fabrication steps. Furthermore, a short review is given about new innovative high-efficiency cell concepts including (i) metal wrap through (MWT), (ii) emitter wrap through (EWT) and (iii) back junction back contact (BJBC) silicon solar cells, pointing out the advantages and challenges of these cell structures. Due to the fact that today high-efficiency solar cells are mainly produced on n-type mono Si wafers, we pay special attention to n-type solar cells, comparing boron-doped emitter, aluminium-doped emitter and a-Si:H-c-Si hetero solar cells with each other.