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EPE 2009 - Subtopic 01-1 - LS: 'High Frequency SC for Industrial Power'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 01: 'Active Devices' > EPE 2009 - Subtopic 01-1 - LS: 'High Frequency SC for Industrial Power'
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	Advanced HF SIC MOS devices   By Anant AGARWAL, Robert CALLANAN, mrinal DAS, brett HULL, James RICHMOND	[View]   [Download]
Abstract: The characteristics of Silicon Carbide, 1200 V, 20 A MOSFETs have been described from a user’s perspective. DC and dynamic characteristics of SiC MOSFETs have been compared with Si 900 V Super Junction MOSFET (SJMOSFET), Si 1200 V MOSFET and IGBTs. The advantages of SiC MOSFET are their lower turn-off losses, lower conduction losses and lower gate charge. However, they have low output impedance, low transconductance and low threshold voltage. These factors should be taken into account when designing the gate drive and fault detection circuits. The use of the internal body diode is not recommended for SiC MOSFETs due to its high voltage drop and therefore considerations for choosing the rating of external SiC Schottky diode have been presented. The absence of turn-off current tail results in voltage overshoot and ringing and therefore careful minimization of parasitics in the gate drive and load circuits is required. Finally, the results of reliability tests on SiC MOSFETs have been summarized.
	Advanced IGBT technologies for HF operation   By Gourab MAJUMDAR	[View]   [Download]
Abstract: The slides of the Keynote Speach about Advanced IGBT technologies for HF operation
	Superjunction MOS devices - From device development towards system optimization   By Holger KAPELS	[View]   [Download]
Abstract: Superjunction devices are enabling very fast switching performance and driving the market especially in applications where efficiency and power densities are key requirements. Two main technology concepts – multiple EPI layers and trench filling – are known. Over the years, a continuous reduction of the area specific on-resistance can be observed, leading to smaller device capacitances and inherent increasing switching speed. To widen the market position even in applications where fast switching transients are critical, a systematic approach is necessary to find an optimum trade-off between EMI and efficiency requirements. This paper presents the actual state of the art of Superjunction device concepts and shows how new MOSFET generations can combine the benefits of compensation devices like low area specific on-resistance and low capacitive losses with the strength of conventional power semiconductors like good control of the switching behavior by the gate resistance and low radiation noise generation.