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 EPE 2007 - Subtopic 02-2 - LS: Materials and interconnection technologies, thermal management 
 You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2007 - Conference > EPE 2007 - Topic 02: 'Passive components, system integration & packaging' > EPE 2007 - Subtopic 02-2 - LS: Materials and interconnection technologies, thermal management 
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   Experimental Analysis of Temperature Distribution within Traction IGBT Modules 
 By ROCHET Jean-Paul; GARONNE Olivier; REBOLLO José; PERPINYA Xavier; JALBY Phillippe; MERMET-GUYENNET Michel 
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Abstract: This work establishes a method which allows a rapid thermal evaluation of both IGBT modules and cooling systems during an acceleration or deceleration cycle experienced along any traction application. Usually, the followed methodologies to test the cooling systems in railway applications are based on power pulses which rapidly reach its steady-state, instead of using current saw-tooth waveforms more similar to the real working environment. This procedure has been applied to a heat pipe-based thermosyphon optimised for railway applications to do its evaluation. From the experiment results, it is concluded that the temperature distribution inside the power module is strongly dependent on both the thermal excitation procedure applied to the whole system and the way to mechanically fix the power modules to the cooling system.

 
   High temperature behaviour of aluminium nitride 
 By LEBEY Thierry; SAIZ Jose; DAGDAG Selim; DUTARDE Emmanuel; DINCULESCU Sorin 
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Abstract: One of the most attractive ways to increase power handling capability in power modules is to increase the operating temperature. Aluminium nitride based ceramics are claimed to be the ideal candidates to be used as substrates. However, depending on the elaboration process a decrease of the AlN dielectric strength may be observed. These results are discussed in the following paper.

 
   High Voltage 3D-Capacitor 
 By BERBERICH Sven; BAUER Anton; RYSSEL Heiner 
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Abstract: In this work, we introduce a high voltage 3D-capacitor as a novel passive power device for a 400V application. This device is realized in silicon technology which allows process reproducibility, high accuracy in capacitance values, and high quality of the dielectric layers (i.e., endurance at high electric field strengths). It can be manufactured discrete or as part of a monolithic integrated circuit. The outstanding properties of the device are a high ratio of capacitance value to consumed silicon area (capacitance enlargement of more than a factor of 16 in comparison to plane capacitors) and very stable capacitance values over a broad temperature range (i.e., average of 24ppm/°C from 20-175°C).