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EPE-PEMC 1998 - Topic 01: 'Power Semiconductor Devices'
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 1998 - Conference > EPE-PEMC 1998 - Topic 01: 'Power Semiconductor Devices'
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	Simulation and experimental investigation of power losses in active voltage clamping circuits   By T. Reimann; R. Krümmer; J. Petzoldt	[View]   [Download]
Abstract: Simulation and experimental investigation of power losses in active voltage clamping circuits
	The control and optimisation of IGBT turn-off characteristics under short circuit conditions   By P. W. Wheeler	[View]   [Download]
Abstract: The control and optimisation of IGBT turn-off characteristics under short circuit conditions
	MCT versus IGBT in soft and hard switching applications   By H. Niedrist; K. Krischan; T.A. Lipo	[View]   [Download]
Abstract: MCT versus IGBT in soft and hard switching applications
	The estimation of semiconductor's silicon temperature in the real operating conditions   By Z. Jakopovic; F. Kolonic; Z. Bencic	[View]   [Download]
Abstract: The estimation of semiconductor's silicon temperature in the real operating conditions
	Free-wheeling diodes with improved reverse recovery by combined electron and proton irradiation   By J. Vobecky; P. Hazdra; N. Galster; E. Carrol	[View]   [Download]
Abstract: Free-wheeling diodes with improved reverse recovery by combined electron and proton irradiation
	In-process monitoring of carier lifetime distribution in technology of large-area power semiconductor devices   By V. Benda; J. Kozisek	[View]   [Download]
Abstract: In-process monitoring of carier lifetime distribution in technology of large-area power semiconductor devices
	A new macromodel of punch through IGBT including the temperature effect on parameters: analysis and validation   By C. Leonardi; F. Frisina; S. Musumeci; A. Raciti	[View]   [Download]
Abstract: A new macromodel of punch through IGBT including the temperature effect on parameters: analysis and validation
	Behavior of silicon controlled avalanche diodes at high junction temperatures   By Vasile V.N. Obreja; Eugen Lakatos; Alexandru Obreja	[View]   [Download]
Abstract: Behavior of silicon controlled avalanche diodes at high junction temperatures
	On the design of field limiting ring for improving corner breakdown voltage   By S. Y. Lee; Y. H. Lho; J. D. Kim; J. Y. Kang; J. G. Koo; K. S. Nam	[View]   [Download]
Abstract: On the design of field limiting ring for improving corner breakdown voltage
	ASIC implementation of an incremental optical encoder   By C-tin Filote; A. Graur	[View]   [Download]
Abstract: ASIC implementation of an incremental optical encoder
	A P-channel LDMOS transistor using a new tapered field oxide technology   By J. Kim; S. G. Kim; T. M. Roh; S. Y. Lee; J. G. Koo; K. S. Nam	[View]   [Download]
Abstract: A P-channel LDMOS transistor using a new tapered field oxide technology
	A novel lateral SOI BMFET in DMOS structure with Bipolar-FET Operation   By Doo-Young Kim; Dae-Suk Byeon; Min-Koo Han; Won-Oh Lee; Yearn-Ik Choi	[View]   [Download]
Abstract: A novel lateral SOI BMFET in DMOS structure with Bipolar-FET Operation
	Study of the device characteristics of the base resistance controlled thyristor with the self-align corrugated P-base   By D. S. Byeon; B. H. Lee; D. Y. Kim; M. K. Han; Y. I. Choi; W. O. Lee	[View]   [Download]
Abstract: Study of the device characteristics of the base resistance controlled thyristor with the self-align corrugated P-base
	Post-irradiation effects in commercial power VDMOSFETs   By A. Jaksic; M. Pejovic; G. Ristic	[View]   [Download]
Abstract: Post-irradiation effects in commercial power VDMOSFETs
	A new IGBT spice macromodel with high accuracy description of the parasitic capacitances   By A. Maxim; D. Andreu; J. Boucher	[View]   [Download]
Abstract: A new IGBT spice macromodel with high accuracy description of the parasitic capacitances
	The insulated-gate triac (IGTR): a new three terminal bi-directional switch   By J. S. Ajit; R. Dutta; D. Kinzer	[View]   [Download]
Abstract: The insulated-gate triac (IGTR): a new three terminal bi-directional switch