EPE Association: EPE 2005 - Topic 01-4

EPE 2005 - Topic 01-4 - LS: New Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-4 - LS: New Devices

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   AC Switches with Integrated Gate Driver Supplies
By NGUYEN Binh; CREBIER Jea; SCHAEFFER Christian; MITOVA Radoslava; AUBARD Laurent [View]
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Abstract: Monolithic integration dedicated to power electronics applications simplifies design and implementation of converters. This paper presents a simple and highly integrated gate driver powering technique for AC switches and AC to AC converters. Gate driver supply operating principle and integration are first recalled. Then, it is shown how the proposed solution can easily be implemented into or within AC switches made with two elements or even with double sided switches. Finally, it is shown how this gate driver powering technique operates when used in AC to AC converters. An experimental set up comes to validate this operation and the overall approach.

   Application of SiC-JFETs in Current Source Inverter Topologies
By HINRICHSEN Frank; KOCH Immo; CANDERS Wol [View]
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Abstract: SiC-JFETs are promising for many future applications but have a normally-on behaviour, which usually necessitates an auxiliary MOSFET to achieve self-blocking capability. However this characteristic is predestinated to current source inverter topologies as an attractive alternative for fast switching applications. The paper presents practical investigations o SiC-JFETs with a modified driver stage in a current source inverter and for comparison in a voltage source inverter topology. Measurement results of both topologies at a frequency of 250 kHz are included. Furthermore differences in the minimising of switching losses for each topology are shown.

   Experimental and Numerical Investigations of 13-kV Diodes and Asymmetric Thyristors
By KELLNE; SCHULZE Han; SCHNEIDER Carsten; NIEDERNOSTHEIDE Fran [View]
[Download]

Abstract: Diodes and asymmetric thyristors with a blocking capability of 13 kV can be used with great benefit in various applications such as High-Voltage Direct Current Transmission, Flexible Alternate Current Transmission, or the wide field of Pulsed-Power Applications. We have fabricated first test diodes and direct light-triggered asymmetric thyristors designed for such applications. Characteristic design features of both devices are described and their typical static and dynamical features are presented. In the 13-kV diodes, a recently proposed buried field stop layer was implemented. First test measurements confirmed the predicted improvement of the reverse recovery behavior of a diode provided with such a buried field stop layer. The main challenge in designing the asymmetric thyristor pertained to the integration of a direct light-triggering function, and overvoltage protection.

EPE 2005 - Topic 01-4 - LS: New Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-4 - LS: New Devices
	[return to parent folder]

	AC Switches with Integrated Gate Driver Supplies By NGUYEN Binh; CREBIER Jea; SCHAEFFER Christian; MITOVA Radoslava; AUBARD Laurent	[View] [Download]
Abstract: Monolithic integration dedicated to power electronics applications simplifies design and implementation of converters. This paper presents a simple and highly integrated gate driver powering technique for AC switches and AC to AC converters. Gate driver supply operating principle and integration are first recalled. Then, it is shown how the proposed solution can easily be implemented into or within AC switches made with two elements or even with double sided switches. Finally, it is shown how this gate driver powering technique operates when used in AC to AC converters. An experimental set up comes to validate this operation and the overall approach.

	Application of SiC-JFETs in Current Source Inverter Topologies By HINRICHSEN Frank; KOCH Immo; CANDERS Wol	[View] [Download]
Abstract: SiC-JFETs are promising for many future applications but have a normally-on behaviour, which usually necessitates an auxiliary MOSFET to achieve self-blocking capability. However this characteristic is predestinated to current source inverter topologies as an attractive alternative for fast switching applications. The paper presents practical investigations o SiC-JFETs with a modified driver stage in a current source inverter and for comparison in a voltage source inverter topology. Measurement results of both topologies at a frequency of 250 kHz are included. Furthermore differences in the minimising of switching losses for each topology are shown.

	Experimental and Numerical Investigations of 13-kV Diodes and Asymmetric Thyristors By KELLNE; SCHULZE Han; SCHNEIDER Carsten; NIEDERNOSTHEIDE Fran	[View] [Download]
Abstract: Diodes and asymmetric thyristors with a blocking capability of 13 kV can be used with great benefit in various applications such as High-Voltage Direct Current Transmission, Flexible Alternate Current Transmission, or the wide field of Pulsed-Power Applications. We have fabricated first test diodes and direct light-triggered asymmetric thyristors designed for such applications. Characteristic design features of both devices are described and their typical static and dynamical features are presented. In the 13-kV diodes, a recently proposed buried field stop layer was implemented. First test measurements confirmed the predicted improvement of the reverse recovery behavior of a diode provided with such a buried field stop layer. The main challenge in designing the asymmetric thyristor pertained to the integration of a direct light-triggering function, and overvoltage protection.