EPE 2005 - Topic 14-ETGa: Medium voltage converters 1 | ||
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 14: POWER ELECTRONICS IN ELECTRICAL ENERGY GENERATING SYSTEMS > EPE 2005 - Topic 14-ETGa: Medium voltage converters 1 | ||
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![]() | Active-Neutral-Point-Clamped (ANPC) Multilevel Converter Technology
By BARBOSA Peter; CELANOVIC Nikola; WINKELNKEMPER Manfred; STEIMER Peter | |
Abstract: This paper proposes a multilevel power conversion concept based on the combination of neutral-point-clamped (NPC) and floating capacitor converters. In the proposed scheme, the voltage balancing across the floating capacitors is achieved by using a proper selection of redundant switching states, and the neutral-point voltage is controlled by the classical dc offset injection. Experimental results are illustrated in the paper to demonstrate the system operation.
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![]() | High Power Medium Voltage Drives – Innovations, Portfolio and Trends
By KLAASSEN Norbert; KLUG Rol | |
Abstract: The paper gives an overview over high power medium voltage drive inverters in the range between one and one hundred megawatts. First the applications and their key requirements are summarized. Then the available power semiconductors and the different inverter circuit topologies with their different properties, advantages and drawbacks are presented. The key features are compared and suitable converter types for the applications and industry branches are identified. Finally, future trends of technology, manufacturing and market are outlined.
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![]() | Very High Power PEBB technology
By BRUECKNER Thomas; BERNET Steffen; OEDEGARD Bjoern; STEIMER Peter; APELDOORN Oscar | |
Abstract: In the field of power electronics the Power Electronics Building Block (PEBB) is a key functional component. With regard to the applications, it is of outmost importance that the PEBB technology used is compact, cost-effective and reliable. The IGCT is at the forefront of technology in high power, medium-voltage applications. For further improvement in size and costs a new ANPC IGCT PEBB has been developed. The main new technologies to achieve higher powers are the new low-inductive gate-unit to maintain hardswitched operation up to more than 6000A, the increased SOA of the 91mm asymmetric IGCT (4 inch technology) and the antiparallel diode up to more than 6000A and the Active NPC technology, which allows an optimum and equal loss balancing in all power semiconductorsThe maximum inverter output power has been increased by 80\% with a parallel increase in the power density and reduced costs per kVA.
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