EPE Association: EPE 2005 - Topic 01-2

EPE 2005 - Topic 01-2 - LS: Rugged devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-2 - LS: Rugged devices

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   High-Temperature Integration of Silicon Carbide (SiC) and Silicon-on-Insulator (SOI) Electronics in Multichip Power Modules (MCPMs)
By HORNBERGER Jared; LOSTETTER Alexander [View]
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Abstract: Arkansas Power Electronics International, Inc, (APEI, Inc.) and University of Arkansas researchers have developed a novel, highly miniaturized motor drive capable of operation in excess of 250 °C. The high-temperature multichip power module (MCPM) integrates silicon carbide (SiC) JFET power transistors with high-temperature MOS silicon-on-insulaor (SOI) control electronics into a single, highly miniaturized and compact power package. This paper will outline the design philosophy behind the high-temperature MCPM, discuss the high-temperature packaging technologies (including substrate selection, wirebonding, and die attach) developed and employed for module fabrication, illustrate thermal modeling results of the package, and present the results of prototype testing (demonstrating functionality).

   Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions
By BUTTAY Cyril; BERGOGNE Dominique; ALLARD Bruno; MOREL Herve; BREVET Olivier [View]
[Download]

Abstract: This paper addresses the behavior of low voltage MOSFETs under breakdown avalanche operation. The phenomena leading to avalanche operation of the MOSFET transistors in automotive applications are first presented. Then, after a brief description of the model and of the experimental identification of its parameters, electrothermal simulations are performed. A special focus is given to the current balance between paralleled MOSFETs, because in this case breakdown voltage mismatches are a well-known reliability issue. These simulations demonstrate the influence of the specific avalanche path resistance on current sharing. Calculations performed using the proposed model give results far less pessimistic (lower temperature rise on the most stressed transistor) than classical temperaturedependant- only avalanche models. This avoids expensive specifications narrowing when designing for mass-market applications (where wide manufacturing dispersions occur).

   Periodic and traveling current-density distributions in high-voltage diodes caused by avalanche injection
By KELLNE; SCHULZE Han; FALCK Elmar; NIEDERNOSTHEIDE Fran [View]
[Download]

Abstract: Fast switching of high-voltage diodes from the forward-conducting state to the blocking state may result in avalanche injection at diode voltages far below the static breakdown voltage, when the concentration of free charge carriers in the space charge region exceeds the doping concentration. Under such conditions, the current-density may become non-uniform. Our numerical investigations on 3.3-kV and 13-kV diodes show that–depending on the turn-off conditions–diverse current-density patterns may arise. Two completely different types of periodic current-density distributions that may appear in high-power diodes during the reverse recovery period are investigated in detail by means of numerical calculations. Furthermore, the influence of the charge carrier lifetime and thermal effects on the evolution of the current-density patterns emerging from the periodic current-density distribution is discussed.

EPE 2005 - Topic 01-2 - LS: Rugged devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-2 - LS: Rugged devices
	[return to parent folder]

	High-Temperature Integration of Silicon Carbide (SiC) and Silicon-on-Insulator (SOI) Electronics in Multichip Power Modules (MCPMs) By HORNBERGER Jared; LOSTETTER Alexander	[View] [Download]
Abstract: Arkansas Power Electronics International, Inc, (APEI, Inc.) and University of Arkansas researchers have developed a novel, highly miniaturized motor drive capable of operation in excess of 250 °C. The high-temperature multichip power module (MCPM) integrates silicon carbide (SiC) JFET power transistors with high-temperature MOS silicon-on-insulaor (SOI) control electronics into a single, highly miniaturized and compact power package. This paper will outline the design philosophy behind the high-temperature MCPM, discuss the high-temperature packaging technologies (including substrate selection, wirebonding, and die attach) developed and employed for module fabrication, illustrate thermal modeling results of the package, and present the results of prototype testing (demonstrating functionality).

	Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions By BUTTAY Cyril; BERGOGNE Dominique; ALLARD Bruno; MOREL Herve; BREVET Olivier	[View] [Download]
Abstract: This paper addresses the behavior of low voltage MOSFETs under breakdown avalanche operation. The phenomena leading to avalanche operation of the MOSFET transistors in automotive applications are first presented. Then, after a brief description of the model and of the experimental identification of its parameters, electrothermal simulations are performed. A special focus is given to the current balance between paralleled MOSFETs, because in this case breakdown voltage mismatches are a well-known reliability issue. These simulations demonstrate the influence of the specific avalanche path resistance on current sharing. Calculations performed using the proposed model give results far less pessimistic (lower temperature rise on the most stressed transistor) than classical temperaturedependant- only avalanche models. This avoids expensive specifications narrowing when designing for mass-market applications (where wide manufacturing dispersions occur).

	Periodic and traveling current-density distributions in high-voltage diodes caused by avalanche injection By KELLNE; SCHULZE Han; FALCK Elmar; NIEDERNOSTHEIDE Fran	[View] [Download]
Abstract: Fast switching of high-voltage diodes from the forward-conducting state to the blocking state may result in avalanche injection at diode voltages far below the static breakdown voltage, when the concentration of free charge carriers in the space charge region exceeds the doping concentration. Under such conditions, the current-density may become non-uniform. Our numerical investigations on 3.3-kV and 13-kV diodes show that–depending on the turn-off conditions–diverse current-density patterns may arise. Two completely different types of periodic current-density distributions that may appear in high-power diodes during the reverse recovery period are investigated in detail by means of numerical calculations. Furthermore, the influence of the charge carrier lifetime and thermal effects on the evolution of the current-density patterns emerging from the periodic current-density distribution is discussed.