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 EPE 2005 - Topic 01-1 - LS: IGBT components 
 You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-1 - LS: IGBT components 
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   An investigation of a reliable behavioral IGBT Model in comparison to PSpice and measurement in Hard- and Softswitching applications 
 By MUTSCHLER Peter; STIER Sven 
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Abstract: Hard and softswitching simulations and measurements of a fast IGBT are compared and discussed in this paper. The simulations are done by PSpice 9.2, using the internal model editor and by an easy adjustable behavioral network model with easy parameter extraction. The networkmodel is implemented in Simplorer 6.0 and considers the conductivity modulation effect. The measurements are done using a step down converter and a serial resonant converter-circuit for high frequency induction heating applications with a resonance frequency of 400 kHz.

 
   Field Stop IGBTs with dynamic clamping capability - a new degree of freedom for future inverter designs? 
 By UMBACH Frank; SCHAEFFER Carsten; LASKA Thomas; MILLER Gerhard; BAESSLER Marco 
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Abstract: In this paper the dynamic clamping properties and design aspects of modern IGBT devices are discussed, a detailed characterization of a dynamic clamping optimized single IGBT chip is shown as well as the way to the integration into a big high current IGBT module. The upcoming possible advantages both for the designer of an inverter as well as for the chip producer are addressed. Also hints are given concerning the topics to solved before product introduction like suitable diode design as well as all reliability aspects.

 
   MULTICOMMUTATION OF IGBTS IN LARGE INVERTERS 
 By ECKEL Han; NAGEL Andreas; HELSPER Martin; BAKRAN Mark 
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Abstract: Large inverter-systems are characterized by a significant number of parallel IGBTs operating on the same dc-link. The IGBT-phases are cross coupled by their mutual stray inductance. This paper investigates the special effects occurring due to nearly simultaneous switching of multiple IGBTs. This operation can cause a significant increase in stress on the IGBT and on the free wheel diode. Countermeasures to cope with these problems will be discussed.