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SMIS - a prospective solution for power MOSFET transistor
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| Author(s) |
PODGORSKI Jacek; LISIK Zbigniew; SZMIDT Jan |
| Abstract |
The new solution of unipolar device, called SMIS, that can offer some advantages in the field of power semiconductor devices is presented. Correctness of the SMIS concept with reference to its application to power unipolar transistors has been checked by numerical simulations and manufacturing of test structures. The results of these investigations are presented in paper. |
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| Filename: | 0860-epe2007-full-20380045.pdf |
| Filesize: | 399.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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