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Silicon Carbide (SiC) D-MOS for Grid-Feeding Solar-Inverters
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| Author(s) |
STALTER Olivier; BURGER Bruno |
| Abstract |
The new MOSFET-generation with SiC-materials seems well suited for power electronics converters up to 1200 V operating-voltage, and particularly for grid-feeding solar-inverters. Their high switching speed and low on-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce the costs and weight of the converters. This paper shows a comparison between IGBT and SiC DMOSFET devices and first measurements of some 1200 V SiC DMOSFET samples. |
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| Filename: | 0721-epe2007-full-17491846.pdf |
| Filesize: | 804.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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