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Deep Trench MOSFET structures study for a 1200 Volts application
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| Author(s) |
ISOIRD Karine; ROIG Jaume; DUBREUIL Pascal; THEOLIER L.; MORANCHO Frederic; BRUNET Magali; MAHFOZ-KOTB Hicham |
| Abstract |
In this work we studied some possible high voltage MOSFETs structures that can replace the IGBT in the railway traction converters. In this purpose, some high voltage power MOS structures are presented and theoretically compared using 2D simulations. Simulations results show that the DT-UMOSFET should be a good challenger to the 1200 Volts IGBT. Moreover, the influence of various parameters, like trench width, trench verticality or boron dose, on DT-UMOSFET static performances is shown. |
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| Filename: | 0600-epe2007-full-09191018.pdf |
| Filesize: | 506.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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