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   Recent developments in IGCT gate units   [View] 
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 Author(s)   LUESCHER Matthias; BACKLUND Bjoern 
 Abstract   Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish a balance between the semiconductor and the gate unit for optimal IGCT performance. 
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Filename:0574-epe2007-full-14332834.pdf
Filesize:355.1 KB
 Type   Members Only 
 Date   Last modified 2008-01-11 by System