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Recent developments in IGCT gate units
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Author(s) |
LUESCHER Matthias; BACKLUND Bjoern |
Abstract |
Recent improvements in GCT silicon design have allowed increased turn-off capabilities for IGCTs thus placing greater demands on the gate-unit. This paper shows how the design challenges arising from this new turn-off capability have been addressed to re-establish a balance between the semiconductor and the gate unit for optimal IGCT performance. |
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Filename: | 0574-epe2007-full-14332834.pdf |
Filesize: | 355.1 KB |
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Type |
Members Only |
Date |
Last modified 2008-01-11 by System |
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