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Robustness and turn-off losses of high voltage IGBT
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| Author(s) |
ECKEL Hans-Guenter; BAKRAN Mark M. |
| Abstract |
A simple model for the turn-off of high voltage IGBTs with long carrier lifetime is derived from the device physics. It is used to get a better understanding of the behavior of the device during the turn-off transient and the influence of the gate drive and a capacitive snubber. The peak electric field and the overvoltage are analyzed and special effects of field stop devices are discussed. |
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| Filename: | 0060-epe2007-full-15112617.pdf |
| Filesize: | 500.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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