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Relevance of P-Channel MOSFETs in Current and Future Applications
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| Author(s) |
Aranzazu Diaz-Valdivieso, Dirk Ahlers, Gerald Deboy |
| Abstract |
P-Channel MOSFETs are well known for their
physical limitations compared to the N-Channel MOSFETs.
Hole mobility is around three times smaller than electron
mobility. Therefore a larger active area is necessary to
achieve the same RDS(ON), thus making P-Channel devices
more expensive. But they are equally known for their
simplicity of usage. For applications in which a high side
switch is needed, P-Channel MOSFET are the easiest option
for their simple driver IC architecture and simple external
circuitry, reducing the number of elements in the system. In
this paper we will analyze the current and future usage of PChannel
MOSFETs. |
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| Filename: | T16-704.pdf |
| Filesize: | 170.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2007-03-08 by System |
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