| Abstract |
The new CoolMOS C3 generation combines ectremely high on state
conductivity with ultra fast switching speed at full pulse current capability. In many applications the outstanding switching performance of the CoolMOS can't be utilized
due to the dynamic behaviour of the diode. For this reason a whole family of SiC-diodes have been developed to get the ideal matched pair of switch and ultra fast diodes.
Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. However, there are additional advantages making SiC devices
attractive for the system designer. Fast switching and fast recovery of the built-in diode as well as short circuit capability (1ms) of vertical VJFETs is in many application of great importance. The new IGBT and EMCON-diode family covers the whole power rating from 1A ¡Ü I
¡Ü 3600A and 600V ¡Ü VB1 ¡Ü6500V. Especially the FS-NPT-IGBT-technology shows an outstanding ruggedness behaviour e.g.
temperature stability, lutch up free, short circuit capability is easy in paralleling but dependent on the voltage rating certain requirements have to be considered. While the switching speed of the low volt-
age devices (600V, 1200V, 1700V) is almost unlimited special care has to be taken by the high voltage devices. |
