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Current Sharing Properties of SiC Pin-Diodes Compared to SI Pin-Diodes
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| Author(s) |
Frode Kleveland; Tore M. Undeland |
| Abstract |
This paper is a theoretical work where the main objective is
to reveal some of the typical characteristic properties of a
SiC pin diode device. Calculations of Vsat are performed for
different breakdown voltages, current densities and
temperatures. Loss levels are also an issue. For comparision,
similar calculations are also performed for Si. |
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| Filename: | Unnamed file |
| Filesize: | 110.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-20 by System |
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