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Modelling of High Voltage SiC Bipolar Transistors for Switch Applications
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| Author(s) |
E. Danielsson; M. Domeij; C-M. Zetterling; M. Östling |
| Abstract |
SiC bipolar transistors have been modeled using measurements, device simulations and theoretical calculations from device physics. The model can be used to predict the performance of SiC BJTs in more complex systems, e.g. high voltage integrated circuits. Here the model was used to compare simulation and measurement for switching of inductive load. |
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| Filename: | Unnamed file |
| Filesize: | 250 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-24 by System |
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