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Static and Dynamic Characteristics of Junction Field Effect Transistors in 4H Silicon Carbide
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| Author(s) |
S.-M. Koo; M. Domeij; C-M. Zetterling; M. Östling |
| Abstract |
Junction field-effect transistors (JFETs) with a bureid gate have been fabricated in 4H polytype silicon carbide (SiC). The devices show drain currents of ~30-50 mA at room temperature for a channel width of 0.1 mm and turn-off gate voltage of ~20-70 V, depending on the channel thickness. The dc static characteristics were measured up to 300° C, with well-saturated drain currents and a reduction of the current down to 30% of room temperature values. The dynamic characteristics of 4H-SiC JFETs in a circuit with inductive load have also been characterized and discussed. |
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| Filename: | Unnamed file |
| Filesize: | 80.55 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-27 by System |
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