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Workshop: THE FUTURE OF EUROPEAN SILICON CARBIDE POWER ELECTRONICS
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Author(s) |
David Hinchley; Roger Bassett |
Abstract |
In 2001, Infineon in Germany launched the world’s first commercial Silicon Carbide (SiC) power semiconductor devices – a range of 300V and 600V Schottky diodes targeted at industrial applications. At the time, Europe looked well positioned to lead the world in SiC power electronics. However, in the last four years, the balance of power has shifted towards the US and more recently Japan. |
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Filename: | Unnamed file |
Filesize: | 14.99 KB |
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Type |
Members Only |
Date |
Last modified 2006-02-14 by System |
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