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   Workshop: THE FUTURE OF EUROPEAN SILICON CARBIDE POWER ELECTRONICS   [View] 
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 Author(s)   David Hinchley; Roger Bassett 
 Abstract   In 2001, Infineon in Germany launched the world’s first commercial Silicon Carbide (SiC) power semiconductor devices – a range of 300V and 600V Schottky diodes targeted at industrial applications. At the time, Europe looked well positioned to lead the world in SiC power electronics. However, in the last four years, the balance of power has shifted towards the US and more recently Japan. 
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 Type   Members Only 
 Date   Last modified 2006-02-14 by System