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Dynamic Voltage Rise Control, the most efficient way to control turn – off switching behaviour of IGBT transistors
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| Author(s) |
Piotr Luniewski, Uwe Jansen, Michael Hornkamp |
| Abstract |
The goal of this paper is to present a new approach
for the control strategy of Trench-/Field-Stop IGBTs which
results in optimised turn-off behaviour. Significant UCE
overvoltages across stray inductances, as a result of very high
di/dt during turning-off and collector current oscillations caused
by the absence of tail current, are key challenges in the control of
this new IGBT structure. This article contains detailed analysis
of Dynamic Voltage Rise Control and experimental results for
the high current IGBT 1200V- and 1700V- families. |
| Download |
| Filename: | 080 |
| Filesize: | 355.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-07 by System |
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