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A First Loss Evaluation using a vertical SiC-JFET and a Conventional Si-IGBT in the Bidirectional Matrix Converter Switch Topology
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| Author(s) |
LUTZ Josef; HOFMANN Wilfried; DOMES Daniel |
| Abstract |
SiC (silicon carbide) is a material with outstanding properties for power semiconductor application. Beside research activities including different power semiconductor switch types, unipolar JFET devices for blocking voltage of more than 1200V are applicable as samples promising switching loss reduction above all. In this paper the switching behaviour of these SiC-JFETs is compared to this of a similar conventional Si-IGBT regarding the conditions of the bidirectional matrix converter switch topology. Statements concerning the on-state losses will also be discussed focusing the necessary reverse conducting capability of the JFET devices in the matrix converter switch topology. |
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| Filename: | 0153 |
| Filesize: | 777.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-05 by System |
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