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Towards a sensorless current and temperature monitoring in MOSFET-based H-bridge
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Author(s) |
C. Buttay; D. Bergogne; H. Morel; B. Allard; R. Ehlinger; P. Bevilacqua |
Abstract |
This paper describes a method to extract internal temperature and drain current
values of a MOS transistor by proceeding to voltages acquisitions only. Two current and
temperature dependant voltages are measured: the drain-to-source voltage when the MOSFET
is in the linear state, and the body diode forward voltage drop when freewheeling.
Analytical expression are proposed to estimate temperature and current values from the
voltages measurements. The method is then implemented in a microcontroller to achieve a low
cost monitoring system.
Accuracy of the system is verified, and confidence maps over the full working range of the
devices are given.
An application to chip-to-ambient thermal impedance measurement using the estimator and a
calorimeter is proposed. |
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Filename: | EPE2003-PP0497 - Buttay |
Filesize: | 608.1 KB |
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Type |
Members Only |
Date |
Last modified 2003-10-23 by Unknown |
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