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Limiting factors for increasing the switching speed of SiC schottky diodes and bipolar Si diodes in PFC applications
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Author(s) |
H. Kapels; I. Zverev; R. Rupp |
Abstract |
Properties and performance of the boost diodes in PFC boost application are shown. Following limit-ing factors for maximizing the switching speed are covered: turn on energy losses, possible dv/dt fail-ure of boost diode, EMI noise. |
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Filename: | EPE2003-PP0290 - Kapels |
Filesize: | 758 KB |
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Type |
Members Only |
Date |
Last modified 2003-10-23 by Unknown |
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