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600V versus 800V conventional and charge compensated MOSFETs in flyback converters
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| Author(s) |
H. Kapels; M. Pürschel; I. Zverev |
| Abstract |
This paper demonstrates the advantages of 800V MOSFETs in quasi-resonant flyback converters
compared to hard switching circuits with 600V or 800V devices. Moreover, using the characteristics
of modern compensation power MOSFETs, the flyback efficiency can further be improved. |
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| Filename: | EPE2003-PP0292 - Kapels |
| Filesize: | 474.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2003-10-22 by Unknown |
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