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Comparison Of Gaas Based High Voltage Diode Stacks
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| Author(s) |
Viktor Vojtovich, Natalja Kuznetsova, Toomas Rang, Mihhail Pikkov, Jana Ruut |
| Abstract |
The determination of technical requirements for
GaAs epistructures intended for high voltage diode stacks has
been made. The suitable doping level of p+ substrate was
estimated by the contact resistance measurements. Analysis has
shown that for the p+ substrates with the current densities about
0.5-1 A/cm2 the specific contact resistance depends weakly on
doping concentration (at least in the range from 5x1018 to
1x1019cm–3).
The measurements of I-V characteristics on high voltage diode
stacks were done directly. These measurements showed that
Al/p+-pin contacts for n-layer concentration (1x1015cm–3) have
lock-type barrier causing very high voltage drops in diode
stacks. For p+-pin-n+ structures the forward voltage drop
depends on doping level as well as on epilayer thickness. The
reverse voltage depends on pin-layer only. It was found that for
diode stacks manufacture the suitable doping for p+ substrate is
about 5x1018cm–3 and n+ layer doping in epitaxial p+-pin-n+
GaAs structures concentration must be higher than 1x1018cm-3. |
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| Filename: | A45396 |
| Filesize: | 172.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-16 by System |
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