| Abstract |
At present the modeling and the simulation of the
semiconductor devices became an essential help tool in the
power electronics field. Several models have been developed
recently are appropriate to the physicists of the semiconductors
and are dedicated to the internal behavioral modeling of these
devices. On the other hand, as users one we are interested only
in their electric behavior. Indeed, the insertion of these devices
in a circuit environment necessitates enough often to find
models from passive elements and that reproduce the same
electrical behaviour in order to solve the problems mentioned in
the circuits design. For these last objectives we have to develop
behavioral models of diodes, bipolar transistors and IGBTs and
we gave several simulation results [5,6], these results were
satisfactory. In this article, we are interested in modeling and
with the simulation of the short-circuit phenomena in the
energy conversion structures, based on IGBTs, which are often
subjected to disturbances from various origins, these
disturbances often cause short-circuit which cause in more the
share of the cases the destruction of one or several
semiconductor devices if no suitable protection is provided. To
envisage this destruction and to consider an appropriate
protection by user, previous simulations of these structures
prove to be necessary. |
