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Performance Of SiC Schottky Diodes In Matrix Converter Applications
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| Author(s) |
M. J. Bland, P. W. Wheeler, J. C. Clare, L. Empringham |
| Abstract |
The objective of this paper is to assess the performance
of bi-directional switch components for direct AC-AC
(matrix) converter applications. Two 2-phase to 1-phase Matrix
Converters are constructed with different bi-directional switch
components. The three bi-directional switch structures to be
considered are: Silicon (Si) diode-Si IGBT and Silicon Carbide
(SiC) diode-Si IGBT. All of the commutation scenarios possible in
a Matrix Converter topology using two or four step commutation
are studied. The improved reverse recovery performance of the
SiC Schottky diodes is assessed with reference to measured
switching waveforms. The effect of the two different switch
structures on the overall performance of the Matrix Converter
with particular attention to power circuit losses is investigated. |
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| Filename: | A23178 |
| Filesize: | 394.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-15 by System |
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