| Abstract |
Extraction of parameters for models of power
semiconductors is a need for researchers working with
development of power circuits. One of the drawbacks of physics
based models is how to extract the numerous parameters to
describe the model. Different approaches have been taken, most
of them cumbersome to be solved.
This paper presents a simple and accurate method of
parameter extraction for physics based IGBT models. The
procedure, based on an optimization algorithm (simulated
annealing), is easy to implement and is efficient for extraction
of a large number of parameters needed for physics based IGBT
models, only requiring some experimental points of DC and
resistive load characteristics. It is validated by comparing
experimental and simulated results, at various operating
conditions, using a Finite Element, physics based, IGBT model. |
