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Coreless Integrated Transformer Gate Drive Circuit For Power Mosfet/igbt
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| Author(s) |
P. Poulichet, C. M. Tassetti, F. Costa, E. Laboure |
| Abstract |
This paper is focused on the design and the realization
of a gate drive circuit that use a integrated coreless transformer.
This gate drive circuit can be used for MOSFET and IGBT
devices. The insulation is often required for the drive of power
transistor. This transformer can be integrated near the power
transistor and as it not requires manual winding, it will reduce
the cost of the gate drive circuit. In order to reduce the
resistance of the primary and the secondary, the winding is
realized with copper electroplated. Lift off techniques was used
to remove the seed layer necessary for the copper electroplating.
The realization of the gate drive electronic circuit is presented.
The low frequency measurements of the switching of a power
transistor will be performed. Experimental results in frequency
domains for the integrated transformer and in time domains for
the gate drive circuit will be presented in the paper. |
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| Filename: | A1648 |
| Filesize: | 335.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-15 by System |
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