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   Express - Method And Thermal Resistance Measurement Equipment   [View] 
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 Author(s)   Valery M. Gartsbeyn, Sergey V. Ivanov, Nikolay F. Maramygin, Lubov V. Romanovskaya, Stanislav N. Florentsev 
 Abstract   The express-method of thermal resistance measurement in power semiconductor modules is submitted. The method is based on continuous measurement of semiconductor element (IGBT, FRD) temperature-dependent parameter and temperature of the power module baseplate whilst heating the semiconductor by a current up to Tjmax and following compulsory cooling down to Ta. During the subsequent calculations Rthjc and its components R0C0, R1C1, R2C2 of thermal model are calculated for all layers in the module: semiconductors chip - DCB-ceramics - baseplate. The results of modeling by means of finite elements method are described. The automated measurement equipment realizing the developed method are presented. The results of calculations and experiments are given, showing the matching of modeling results and measurement by classical and developed expressmethod. 
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Filename:A15719
Filesize:871.9 KB
 Type   Members Only 
 Date   Last modified 2006-02-15 by System