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Third Quadrant Output Characteristics In High Density Trench Mosfets
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| Author(s) |
Toni Lopez(de), Reinhold Elferich(de), Nick Koper(nl), Tobias Tolle(de), Thomas Duerbaum(de) |
| Abstract |
This paper investigates the DC output characteristics
of ultra high-density trench MOSFETs for synchronous rectifier
applications. Measurement results show a drain current
asymmetry between the first and third quadrant of the output
characteristics that cannot only be attributed to the intrinsic
body diode current. 2D numerical simulations are employed to
study the drain current distribution through the semiconductor
structure. Current flow lines and carrier concentration graphs
reveal the existence of a significant channel current in the subthreshold
region partly responsible of the asymmetry. This effect
might be of relevance in the application and therefore needs to
be considered in any circuital model. SPICE simulations
employing a behavioural macro MOSFET model depict the
impacts on a synchronous buck converter. |
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| Filename: | A14370 |
| Filesize: | 462.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-15 by System |
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