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Experimental Evaluation Of The Influence Of Modern Mosfet Devices On The Phase Node Ringing In Vrm Power Converters
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| Author(s) |
S. Musumeci, R. Pagano, A. Raciti, G. Belverde, C. Guastella, M. Melito |
| Abstract |
The paper deals with the impact of the last generation
MOSFETs on the ringing phenomenon occurring on the phasenode
of a buck converter, which is utilized as voltage regulator
module (VRM). In particular, the present paper deals with the
behavior of the converter with reference to the low-side
MOSFET switch. In fact, the impact of the device behavior has
been analyzed in order to better understand the effects on the
voltage transient of the phase-node. The influence of the
electrical parameters that concern this topic, such as the gate
equivalent impedance and the board layout influence, has been
investigated in an actual buck converter. Moreover, aiming to
individuate a good solution to limit the parasitic transient, two
different choices of the low-side switch have been realized by
implementing a trench-MOSFET and a strip-layout MOSFET.
Finally, the main theoretical and experimental results are
analyzed and discussed. |
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| Filename: | A14367 |
| Filesize: | 499.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-15 by System |
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