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Power device selection and a comparative study of transistor technologies for a Zero Voltage Switching Buck Converter
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| Author(s) |
P. Andreassen; T. Undeland |
| Abstract |
The new ultra thin wafer technology
makes it possible to make Non Punch Through (NPT) IGBTs in the 600V range, with a lightly doped
collector. This new IGBT technology is tested and compared with other competitive transistor technologies. The case study of the Zero Voltage
Switching (ZVS) Buck Converter is performed because this topology until now has favored the use
of MOSFETs. |
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| Filename: | Unnamed file |
| Filesize: | 159.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-01-24 by System |
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