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Comparison of commutation transients of inverters with silicon carbide JFETs with and without body diodes
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| Author(s) |
B. Allebrand; H.-P. Nee |
| Abstract |
An inverter could be built by using silcon carbide power switches only. This can be done by using SiC JFETs which can conduct
current in both directions. An interesting question is how an inverter using SiC JFETs with a body diode compares with an inverter using SiC JFETs without body diodes. This will be discussed in this paper. |
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| Filename: | Unnamed file |
| Filesize: | 106 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-01-24 by System |
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