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   A novel gate drive circuit suitable for high voltage IGBTs which can suppress the dv/dt of IGBT and protect IGBT from short circuit   [View] 
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 Author(s)   S. Inarida 
 Abstract   IGBTs are used in almost all of traction converters as switching devices at this time. This is because the IGBTs have many advantages against GTOs. On the other hand, there are some problems with the converters using high voltage IGBTs. One of the problems is that high speed switching behaviour of IGBTs generates surge voltage at the motor’s side which causes some damage to the wiring’s insulator in the motors and leakage current which causes EMC problems. The other concern is that if a limb of the converter is short-circuited, the current of the IGBT becomes larger in a few microseconds. When the current can be turned off in a few microseconds, the IGBT can be protected from short circuit current. In this paper, a novel dv/dt control method which can make dv/dt smaller with minimum increase of switching losses of the IGBTs and a novel current detecting method for high voltage modular type IGBTs which can detect their short circuit current of them in a quick, easy and accurate manner are proposed and some experimental results show effectiveness of those methods. 
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Filename:EPE2003-PP0307 - Inarida
Filesize:538.9 KB
 Type   Members Only 
 Date   Last modified 2003-10-16 by Unknown