For many applications new, light weight, small size, low accoustic noise and high efficiency inverters are demanded. For these applications several new power semiconductor devices have been developed. One of thee devices is the IGBT (Insulated Gate Bipolar Transistor). With the low saturation voltage of the Bipolar Transistor and the high switching speed characteristic of the MOS-FET, it is the most interesting device at the moment. A VVVF (variable voltage / variable frequency) inverter is taken as an example for overvoltage and overcurrent protection of IGBTs.
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