Insulated Gate Bipolar Transistors (IGBTs) with the most rugged intrinsic short circuit performance generally have high saturation voltage and high operating losses, and vica versa.
This application note demonstrates that IGBTs with even modest intrinsic short-circuit capability can be fully protected against short circuit, allowing the most efficient, cost effective IGBTs to be used, without compromising ruggedness of the overall system.
| Filename: | Unnamed file |
| Filesize: | 754.2 KB |
