Impact of Turn-off Semiconductor Devices on Power Electronics | ||||||
Author(s) | K. Heumann | |||||
Abstract | Turn-off semiconductor devices have vastly promoted modern power electronics during the last decade. Included are bipolar power transistors, Field Efficient Transistors (MOSFETs) Gate Turn-off Thyristors (GTOs) and Insulated Gate Bipolar Transistors (IGBTs). Additional Elements are Static Induction Transistors and Thyristors (SITs and SIThs) as well as MOS Controlled Thyristors (MCTs) for higher frequency applications. The present status of semiconductor power devices is discussed including switching behavior, losses, gate driver, snubber, overcurrent and protection. The standard control is nowadays pulse width modulation. Resonant circuits are growing in importance because they allow for higher frequency, lower storage components and transformers and reduction of switching losses in semiconductor devices. Main field of application are discussed and future trends given. |
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Type | Members Only | |||||
Date | Last modified 2006-04-19 by System | |||||
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