The use of silicon as the basic semiconductor for power electronic sets a limitation for the rise in device operating temperature. The great increase in leakage currents is a major obstacle for the rise in junction temperature. To avoid this drawback, wide bandgap semiconductors must be considered. Among them, silicon carbide is a promising material thanks to its physical properties more suitable for power applications than those of silicon or gallium arsenide. Moreover its technological progress makes it more and more industrially applicable, which is not yet the case for diamond.
| Filename: | Unnamed file |
| Filesize: | 1.297 MB |
