The aim of this paper is to study the thermal behaviour of MOS-controlled devices. This study is essentially over the temperature evolution due to internal dissipations. First a brief introduction to the temperature measurement methods applied to power electronics is given. Then different Electrical ThermoSensitive Parameters (ETSP) are compared. In order to create the controlled power dissipation in the component a special power pulse generator has been designed. This test generator creates different test pulses (single pulse or train of pulses) with varying duration, amplitude and forms (step and sinusoidal pulses). The definition of junction temperature for large area chips is quite different from the small size ones so the best method adapted for maximum temperature detection is presented and a thermal model based on the finite element principle for predicting the junction temperature is developed and examined.
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